Cypress CY7C1345G manual Capacitance, Thermal Resistance, AC Test Loads and Waveforms

Page 11

CY7C1345G

Capacitance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

Test Conditions

100 TQFP

119 BGA

Unit

Max

Max

 

 

 

 

 

 

 

 

 

 

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

5

5

pF

 

 

VDD = 3.3V.

 

 

 

CCLK

Clock Input Capacitance

5

5

pF

 

 

VDDQ = 3.3V

 

 

 

CIO

Input or Output Capacitance

5

7

pF

 

Thermal Resistance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

Test Conditions

100 TQFP

119 BGA

Unit

Package

Package

 

 

 

 

 

 

 

 

 

 

ΘJA

Thermal Resistance

Test conditions follow

30.32

34.1

°C/W

 

(Junction to Ambient)

standard test methods and

 

 

 

 

 

procedures for measuring

 

 

 

ΘJC

Thermal Resistance

6.85

14.0

°C/W

thermal impedance, per

 

(Junction to Case)

EIA/JESD51.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Test Loads and Waveforms

3.3V I/O Test Load

 

 

 

 

 

 

 

 

 

 

R = 317

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.3V

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

 

Z0

= 50

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL

= 50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 351

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VT = 1.5V

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

 

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.5V I/O Test Load

 

 

 

 

 

 

 

 

 

 

R = 1667

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.5V

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

 

Z0

= 50

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL

= 50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10%

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 1538

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VT = 1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

 

SCOPE

 

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

90%

10%

1ns

90%

10%

1 ns

Document Number: 38-05517 Rev. *E

Page 11 of 20

Image 11
Contents Parameter 133 MHz 100 MHz Unit FeaturesFunctional Description Selection GuideCLR Logic Block DiagramPin Tqfp Pinout Pin Configurations15CY7C1345G NC/72M NC/36M Ball BGA PinoutNC/576M Pin Definitions No Connects. Not Internally connected to the die Operation. Mode Pin has an internal pull upFunctional Overview StaticParameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsUsed Truth TableAddress Cycle Description Function Truth Table for Read or WritePartial truth table for read or write follows Range Ambient Electrical CharacteristicsMaximum Ratings Operating RangeAC Test Loads and Waveforms CapacitanceThermal Resistance Switching Characteristics Shows the read cycle timing Timing DiagramsWrite Cycle Timing Read/Write Timing ZZ Mode Timing Ordering Information Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package Diagrams119-Ball BGA 14 x 22 x 2.4 mm Document History Issue Date Orig. Description of Change

CY7C1345G specifications

The Cypress CY7C1345G is a high-performance static random-access memory (SRAM) device designed for various applications requiring fast data access and minimal power consumption. As a member of Cypress's prolific family of SRAMs, the CY7C1345G is particularly noted for its performance in networking and telecommunications.

This device features a 512 Kbit (64 K x 8) memory organization, making it suitable for applications needing moderate amounts of fast-access memory. The CY7C1345G operates at a wide voltage range of 2.7V to 3.6V, accommodating both high-performance and low-power applications. One of its standout attributes is its fast access time, with read cycle times as low as 10 ns, allowing for rapid data retrieval that is essential for modern computing requirements.

Another key feature of the CY7C1345G is its low-power operation mode, making it an excellent choice for battery-operated applications. It has a typical active current of only 35 mA and a standby current of just 3 µA, ensuring prolonged battery life while still maintaining high-performance levels. This low power consumption is complemented by the device's sleep mode functionality, which further reduces power draw during periods of inactivity.

In terms of interface, the CY7C1345G employs a simple asynchronous access protocol, ensuring ease of integration into existing systems without the need for complex timing schemes. The device supports asynchronous read and write operations, with an output enable feature that facilitates efficient data retrieval.

The CY7C1345G is encased in a compact 44-pin TSOP II package, making it suitable for applications where space constraints are critical. Its design adheres to rigorous quality and reliability standards, with the device being fully tested to meet JEDEC specifications.

With its blend of speed, low power consumption, and simple interface, the Cypress CY7C1345G SRAM is ideal for a wide array of applications, including telecommunications systems, networking devices, and embedded systems. As technology drives the demand for faster and more efficient memory solutions, the CY7C1345G stands out as a reliable and versatile choice in the SRAM landscape.