Cypress CY7C1345G manual Pin Definitions

Page 5

CY7C1345G

Pin Definitions

 

 

 

 

 

Name

IO

 

 

 

 

Description

 

 

 

 

 

A0, A1, A

Input

Address Inputs Used to Select One of the 128K Address Locations. Sampled at the rising edge

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

of the CLK if ADSP or

ADSC

is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed

 

 

 

 

 

 

 

 

 

 

 

 

 

the two-bit counter.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A,

 

 

 

B

Input

Byte Write Select Inputs, Active LOW. Qualified with

 

to conduct byte writes to the SRAM.

 

BW

BW

BWE

 

BWC, BWD

Synchronous

Sampled on the rising edge of CLK.

 

 

 

 

 

 

 

 

 

 

Input

Global Write Enable Input, Active LOW. When asserted LOW on the rising edge of CLK, a global

 

GW

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE).

 

 

 

 

 

 

 

 

 

 

Input

Byte Write Enable Input, Active LOW. Sampled on the rising edge of CLK. This signal is asserted

 

BWE

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

LOW to conduct a byte write.

 

 

 

 

 

CLK

Input Clock

Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst

 

 

 

 

 

 

 

 

 

 

 

 

 

counter when ADV is asserted LOW, during a burst operation.

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

Input

Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used

in

conjunction with

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE2 and CE3 to select or deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only

 

 

 

 

 

 

 

 

 

 

 

 

 

when a new external address is loaded.

 

 

 

 

 

CE2

Input

Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE3 to select or deselect the device. CE2 is sampled only when a new external address is

 

 

 

 

 

 

 

 

 

 

 

 

 

loaded.

 

 

 

 

 

 

 

 

 

 

3

 

 

 

Input

Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE2 to select or deselect the device. CE3 is sampled only when a new external address is

 

 

 

 

 

 

 

 

 

 

 

 

 

loaded.

 

 

 

 

 

 

 

Input

Output Enable, asynchronous Input, Active LOW. Controls the direction of the IO pins. When

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

LOW, the IO pins act as outputs. When deasserted HIGH, IO pins are tri-stated and act as input data

 

 

 

 

 

 

 

 

 

 

 

 

 

pins.

OE

is masked during the first clock of a read cycle when emerging from a deselected state.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input

Advance Input Signal, Sampled on the Rising Edge of CLK. When asserted, it automatically incre-

 

ADV

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

ments the address in a burst cycle.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input

Address Strobe from Processor, sampled on the rising edge of CLK, Active LOW. When

 

ADSP

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are

 

 

 

 

 

 

 

 

 

 

 

 

 

also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recog-

 

 

 

 

 

 

 

 

 

 

 

 

 

nized. ASDP is ignored when CE1 is deasserted HIGH.

 

 

 

 

 

 

 

 

 

 

 

Input

Address Strobe from Controller, sampled on the rising edge of CLK, Active LOW. When

 

ADSC

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are

 

 

 

 

 

 

 

 

 

 

 

 

 

also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recog-

 

 

 

 

 

 

 

 

 

 

 

 

 

nized.

 

 

 

 

 

ZZ

Input

ZZ sleep Input, Active HIGH. When asserted HIGH places the device in a non-time critical sleep

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

condition with data integrity preserved. During normal operation, this pin is low or left floating. ZZ pin

 

 

 

 

 

 

 

 

 

 

 

 

 

has an internal pull down.

 

 

 

 

 

DQs

IO

Bidirectional Data IO lines. As inputs, they feed into an on-chip data register that is triggered by

 

DQPA, DQPB

Synchronous

the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified

 

DQPC, DQPD

 

by the addresses presented during the previous clock rise of the read cycle. The direction of the pins

 

 

 

 

 

 

 

 

 

 

 

 

 

is controlled by OE. When OE is asserted LOW, the pins act as outputs. When HIGH, DQs and

 

 

 

 

 

 

 

 

 

 

 

 

 

DQP[A:D] are placed in a tri-state condition.

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

VSS

Ground

Ground for the core of the device.

 

VDDQ

IO Power

Power supply for the IO circuitry.

 

 

 

 

 

 

 

 

 

 

 

 

Supply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VSSQ

IO Ground

Ground for the IO circuitry.

Document Number: 38-05517 Rev. *E

Page 5 of 20

Image 5
Contents Functional Description FeaturesSelection Guide Parameter 133 MHz 100 MHz UnitCLR Logic Block DiagramPin Tqfp Pinout Pin Configurations15CY7C1345G NC/72M NC/36M Ball BGA PinoutNC/576M Pin Definitions Functional Overview Operation. Mode Pin has an internal pull upStatic No Connects. Not Internally connected to the dieParameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsUsed Truth TableAddress Cycle Description Function Truth Table for Read or WritePartial truth table for read or write follows Maximum Ratings Electrical CharacteristicsOperating Range Range AmbientAC Test Loads and Waveforms CapacitanceThermal Resistance Switching Characteristics Shows the read cycle timing Timing DiagramsWrite Cycle Timing Read/Write Timing ZZ Mode Timing Ordering Information Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package Diagrams119-Ball BGA 14 x 22 x 2.4 mm Document History Issue Date Orig. Description of Change

CY7C1345G specifications

The Cypress CY7C1345G is a high-performance static random-access memory (SRAM) device designed for various applications requiring fast data access and minimal power consumption. As a member of Cypress's prolific family of SRAMs, the CY7C1345G is particularly noted for its performance in networking and telecommunications.

This device features a 512 Kbit (64 K x 8) memory organization, making it suitable for applications needing moderate amounts of fast-access memory. The CY7C1345G operates at a wide voltage range of 2.7V to 3.6V, accommodating both high-performance and low-power applications. One of its standout attributes is its fast access time, with read cycle times as low as 10 ns, allowing for rapid data retrieval that is essential for modern computing requirements.

Another key feature of the CY7C1345G is its low-power operation mode, making it an excellent choice for battery-operated applications. It has a typical active current of only 35 mA and a standby current of just 3 µA, ensuring prolonged battery life while still maintaining high-performance levels. This low power consumption is complemented by the device's sleep mode functionality, which further reduces power draw during periods of inactivity.

In terms of interface, the CY7C1345G employs a simple asynchronous access protocol, ensuring ease of integration into existing systems without the need for complex timing schemes. The device supports asynchronous read and write operations, with an output enable feature that facilitates efficient data retrieval.

The CY7C1345G is encased in a compact 44-pin TSOP II package, making it suitable for applications where space constraints are critical. Its design adheres to rigorous quality and reliability standards, with the device being fully tested to meet JEDEC specifications.

With its blend of speed, low power consumption, and simple interface, the Cypress CY7C1345G SRAM is ideal for a wide array of applications, including telecommunications systems, networking devices, and embedded systems. As technology drives the demand for faster and more efficient memory solutions, the CY7C1345G stands out as a reliable and versatile choice in the SRAM landscape.