Cypress CY62158E manual Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance

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CY62158E MoBL

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground Potential –0.5V to VCC(max) + 0.5V

DC Voltage Applied to Outputs

 

 

in High-Z State [3, 4]

–0.5V to V

+ 0.5V

 

CC(max)

 

DC Input Voltage [3, 4]

–0.5V to V

 

+ 0.5V

 

 

CC(max)

 

Output Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

>2001V

(MIL-STD-883, Method 3015)

 

 

 

Latch up Current

 

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

Device

Range

Ambient

 

[5]

Temperature

 

VCC

CY62158ELL

Industrial

–40°C to +85°C

4.5V – 5.5V

 

 

 

 

 

Electrical Characteristics

Over the Operating Range

 

 

 

 

 

 

 

 

 

 

-45

 

 

Parameter

Description

 

 

 

Test Conditions

Min

Typ [2]

Max

Unit

VOH

Output HIGH Voltage

 

IOH = –1 mA

 

 

 

2.4

 

 

V

VOL

Output LOW Voltage

 

IOL = 2.1 mA

 

 

 

 

 

0.4

V

VIH

Input HIGH Voltage

VCC = 4.5V to 5.5V

 

 

 

2.2

 

VCC + 0.5V

V

VIIL

Input LOW Voltage

VCC = 4.5V to 5.5V

 

 

 

–0.5

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

 

 

–1

 

+1

μA

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

 

+1

μA

ICC

VCC Operating Supply

 

f = fMAX = 1/tRC

 

VCC

= VCCmax

 

18

25

mA

 

Current

 

 

 

IOUT

= 0 mA

 

 

 

 

 

 

f = 1 MHz

 

 

1.8

3

mA

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

ISB1

Automatic CE Power down

 

CE

1 > VCC0.2V, CE2

<

0.2V

 

 

2

8

μA

 

Current — CMOS Inputs

 

VIN > VCC – 0.2V, VIN < 0.2V)

 

 

 

 

 

 

 

 

f = fMAX

(Address and Data Only),

 

 

 

 

 

 

 

f = 0 (OE, and WE), VCC = VCCmax

 

 

 

 

ISB2 [6]

Automatic CE Power-down

 

CE

1 > VCC – 0.2V or CE2 < 0.2V,

 

2

8

μA

 

Current — CMOS Inputs

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

f = 0, VCC = VCCmax

 

 

 

 

 

 

 

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

TSOP II

Unit

ΘJA

Thermal Resistance

Still Air, soldered on a 3 × 4.5 inch,

75.13

°C/W

 

(Junction to Ambient)

two-layer printed circuit board

 

 

ΘJC

Thermal Resistance

 

8.95

°C/W

 

(Junction to Case)

 

 

 

Notes

3.VIL(min) = –2.0V for pulse durations less than 20 ns.

4.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

5.Full Device AC operation assumes a 100 μs ramp time from 0 to VCC (min) and 200 μs wait time after VCC stabilization.

6.Only chip enables (CE1 and CE2), must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

Document #: 38-05684 Rev. *D

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesLogic Block Diagram Functional DescriptionPin Configuration Product PortfolioMin Typ Capacitance Electrical CharacteristicsMaximum Ratings Operating RangeData Retention Characteristics Parameters UnitParameter Description Conditions Min Typ Max Unit Parameter Description 45 ns Unit Min Read CycleWrite Cycle Shows address transition controlled read cycle waveforms.13 Switching WaveformsWrite Cycle No Ordering Information Inputs/Outputs Mode PowerPackage Diagrams Document History Issue Date Orig. Change Description of Change