Cypress CY62158E manual Features, Functional Description, Logic Block Diagram

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CY62158E MoBL

8-Mbit (1M x 8) Static RAM

Features

Very high speed: 45 ns

Wide voltage range: 4.5V – 5.5V

Ultra low active power

Typical active current:1.8 mA @ f = 1 MHz

Typical active current: 18 mA @ f = fmax

Ultra low standby power

Typical standby current: 2 μA

Maximum standby current: 8 μA

Easy memory expansion with CE1, CE2 and OE features

Automatic power down when deselected

CMOS for optimum speed and power

Offered in Pb-free 44-Pin TSOP II package

Functional Description

The CY62158E MoBLis a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption significantly when deselected (CE1 HIGH or CE2 LOW).

To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A19).

To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and OE LOW while forcing the WE HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.

0through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW). See the Truth Table on page 8 for a complete description of read and write modes.The eight input and output pins (IO

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Logic Block Diagram

 

A0

 

DATA IN DRIVERS

 

IO

 

A1

 

 

 

 

 

 

 

 

0

 

A2

 

 

 

 

 

 

 

 

IO

 

A6

DECODER

 

1024K x 8

 

AMPS

1

 

 

 

IO3

 

A3

 

 

 

 

 

 

 

 

 

 

A4

 

 

 

 

 

 

 

 

IO

 

A5

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

A7

ROW

 

ARRAY

 

 

SENSE

IO4

 

A9

 

 

 

 

A8

 

 

 

 

 

 

A10

 

 

 

 

 

 

 

 

IO5

 

A11

 

 

 

 

 

 

 

 

 

CE1

A12

 

 

 

 

 

 

 

 

IO6

 

 

 

 

 

 

 

 

 

IO7

CE2

WE

COLUMN DECODER

POWER

 

 

 

 

 

 

 

 

DOWN

 

 

OE

13

14

15

16

17

18

19

 

 

 

 

 

 

 

 

A

A

A

A

A

A

A

 

 

Cypress Semiconductor Corporation • 198 Champion Court

San Jose, CA 95134-1709

408-943-2600

Document #: 38-05684 Rev. *D

 

 

Revised June 16, 2008

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtProduct Portfolio Pin ConfigurationMin Typ Maximum Ratings Electrical CharacteristicsOperating Range CapacitanceParameters Unit Data Retention CharacteristicsParameter Description Conditions Min Typ Max Unit Read Cycle Parameter Description 45 ns Unit MinWrite Cycle Shows address transition controlled read cycle waveforms.13 Switching WaveformsWrite Cycle No Ordering Information Inputs/Outputs Mode PowerPackage Diagrams Document History Issue Date Orig. Change Description of Change