Cypress CY62146E MoBL manual Switching Characteristics, Write Cycle

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CY62146E MoBL

 

 

 

 

 

 

 

 

 

 

 

 

Switching Characteristics

 

 

 

Over the Operating Range [9, 10]

 

 

 

Parameter

 

 

 

 

 

 

 

 

 

Description

45 ns (Ind’l/Auto-A)

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

ns

tAA

 

Address to Data Valid

 

45

ns

tOHA

 

Data Hold from Address Change

10

 

ns

tACE

 

 

 

 

LOW to Data Valid

 

45

ns

CE

 

tDOE

 

 

 

 

LOW to Data Valid

 

22

ns

OE

 

tLZOE

 

 

 

 

LOW to LOW-Z[11]

5

 

ns

OE

 

tHZOE

 

 

 

 

HIGH to High-Z[11, 12]

 

18

ns

OE

 

tLZCE

 

 

 

LOW to Low-Z[11]

10

 

ns

CE

 

tHZCE

 

 

 

HIGH to High-Z[11, 12]

 

18

ns

CE

 

tPU

 

 

 

LOW to Power Up

0

 

ns

CE

 

tPD

 

 

 

HIGH to Power Down

 

45

ns

CE

 

tDBE

 

 

 

 

 

 

 

 

 

 

 

22

ns

BLE/BHE LOW to Data Valid

 

tLZBE

 

 

 

 

 

 

 

 

 

 

5

 

ns

BLE/BHE LOW to Low-Z[11]

 

tHZBE

 

 

 

 

 

 

 

 

 

 

 

18

ns

BLE/BHE HIGH to HIGH-Z[11,12]

 

Write Cycle [13]

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

45

 

ns

tSCE

 

 

 

LOW to Write End

35

 

ns

CE

 

tAW

 

Address Setup to Write End

35

 

ns

tHA

 

Address Hold from Write End

0

 

ns

tSA

 

Address Setup to Write Start

0

 

ns

tPWE

 

 

 

 

Pulse Width

35

 

ns

WE

 

tBW

 

 

 

 

 

 

 

 

 

 

35

 

ns

BLE/BHE LOW to Write End

 

tSD

 

Data Setup to Write End

25

 

ns

tHD

 

Data Hold from Write End

0

 

ns

tHZWE

 

 

 

 

LOW to High-Z[11, 12]

 

18

ns

WE

 

tLZWE

 

 

 

 

HIGH to Low-Z[11]

10

 

ns

WE

 

Notes

9.Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of 1.5V, input pulse levels of 0 to 3V, and output loading of the specified IOL/IOH as shown in AC Test Loads and Waveforms on page 4.

10.AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.

11.At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.

12.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.

13.The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.

Document Number: 001-07970 Rev. *D

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtProduct Portfolio Pin ConfigurationMaximum Ratings Electrical CharacteristicsOperating Range CapacitanceParameter Description Conditions Min Typ2 Max Unit Data Retention CharacteristicsParameters Unit Write Cycle Switching CharacteristicsRead Cycle No.1 Address Transition Controlled Switching WaveformsWrite Cycle No 1 WE Controlled 13, 17 Write Cycle 3 WE controlled, OE LOW Ordering Information Inputs/Outputs Mode PowerTruth Table BHE BLEPin Tsop II Package DiagramsREV ECN no Issue Date Orig. Change Description of ChangeDocument History