Cypress CY62147EV30 manual Aju, Syt, Zsd, Nxr, Vkn/Pyrs

Page 12

CY62147EV30 MoBL®

Document History Page

Document Title: CY62147EV30 MoBL® 4-Mbit (256K x 16) Static RAM

Document Number: 38-05440

Rev.

ECN No.

Orig. of

Submission

Description of Change

Change

Date

 

 

 

 

 

 

 

 

**

201861

AJU

01/13/04

New Data Sheet

 

 

 

 

 

*A

247009

SYT

See ECN

Changed from Advanced Information to Preliminary

 

 

 

 

Moved Product Portfolio to Page 2

 

 

 

 

Changed Vcc stabilization time in footnote #8 from 100 μs to 200 μs

 

 

 

 

Removed Footnote #15(tLZBE) from Previous Revision

 

 

 

 

Changed ICCDR from 2.0 μA to 2.5 μA

 

 

 

 

Changed typo in Data Retention Characteristics(tR) from 100 μs to tRC ns

 

 

 

 

Changed tOHA from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin

 

 

 

 

Changed tHZOE, tHZBE, tHZWE from 12 to 15 ns for 35 ns Speed Bin and 15 to

 

 

 

 

18 ns for 45 ns Speed Bin

 

 

 

 

Changed tSCE and tBW from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns

 

 

 

 

for 45 ns Speed Bin

 

 

 

 

Changed tHZCE from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns

 

 

 

 

Speed Bin

 

 

 

 

Changed tSD from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for

 

 

 

 

45 ns Speed Bin

 

 

 

 

Changed tDOE from 15 to 18 ns for 35 ns Speed Bin

 

 

 

 

Changed Ordering Information to include Pb-Free Packages

*B

414807

ZSD

See ECN

Changed from Preliminary information to Final

 

 

 

 

Changed the address of Cypress Semiconductor Corporation on Page #1 from

 

 

 

 

“3901 North First Street” to “198 Champion Court”

 

 

 

 

Removed 35ns Speed Bin

 

 

 

 

Removed “L” version of CY62147EV30

 

 

 

 

Changed ball E3 from DNU to NC.

 

 

 

 

Removed redundant foot note on DNU.

 

 

 

 

Changed ICC (Max) value from 2 mA to 2.5 mA and ICC (Typ) value from

 

 

 

 

1.5 mA to 2 mA at f=1 MHz

 

 

 

 

Changed ICC (Typ) value from 12 mA to 15 mA at f = fmax

 

 

 

 

Changed ISB1 and ISB2 Typ values from 0.7 μA to 1 μA and Max values from

 

 

 

 

2.5 μA to 7 μA.

 

 

 

 

Changed ICCDR from 2.5 μA to 7 μA.

 

 

 

 

Added ICCDR typical value.

 

 

 

 

Changed AC test load capacitance from 50 pF to 30 pF on Page #4.

 

 

 

 

Changed tLZOE from 3 ns to 5 ns

 

 

 

 

Changed tLZCE, tLZBE and tLZWE from 6 ns to 10 ns

 

 

 

 

Changed tHZCE from 22 ns to 18 ns

 

 

 

 

Changed tPWE from 30 ns to 35 ns.

 

 

 

 

Changed tSD from 22 ns to 25 ns.

 

 

 

 

Updated the package diagram 48-pin VFBGA from *B to *D

 

 

 

 

Updated the ordering information table and replaced the Package Name column

 

 

 

 

with Package Diagram.

*C

464503

NXR

See ECN

Included Automotive Range in product offering

 

 

 

 

Updated the Ordering Information

*D

925501

VKN

See ECN

Added Preliminary Automotive-A information

 

 

 

 

Added footnote #9 related to ISB2 and ICCDR

 

 

 

 

Added footnote #14 related AC timing parameters

*E

1045701

VKN

See ECN

Converted Automotive-A and Automotive -E specs from preliminary to final

 

 

 

 

 

*F

2577505

VKN/PYRS

10/03/08

Added -45B2XI part (Dual CE option)

 

 

 

 

 

*G

2681901

VKN/PYRS

04/01/09

Added CY62147EV30LL-45ZSXA in the ordering information table

 

 

 

 

 

Document #: 38-05440 Rev. *G

Page 12 of 13

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Configuration Product PortfolioTyp2 Max CY62147EV30LL Ind’l/Auto-AElectrical Characteristics Maximum RatingsOperating Range CapacitanceData Retention Characteristics Thermal Resistance9Parameter Description Test Conditions Parameters 50V UnitSwitching Characteristics Parameter Description Ns Ind’l/Auto-A Ns Auto-E Unit MinMin Max Read Cycle Write Cycle16Switching Waveforms AddressData OUT Previous Data Valid Write Cycle No WE Controlled1, 16, 20 Data IOWrite Cycle No WE Controlled, OE LOW1 IOs Mode Power Truth TableOrdering Information Package Diagrams Ball Vfbga 6 x 8 x 1 mm51-85087-*A AJU SYTZSD NXRSales, Solutions, and Legal Information USB

CY62147EV30 specifications

The Cypress CY62147EV30 is a high-performance, low-power Static Random Access Memory (SRAM) device that has garnered attention in various applications due to its remarkable features and technologies. This SRAM provides a robust solution for applications requiring fast, reliable data access in a compact form factor.

One of the main features of the CY62147EV30 is its density of 1 Megabit, which is organized as 128K x 8 bits. This configuration allows for significant data storage while maintaining a small footprint, making it suitable for embedded systems and portable devices. The device operates with a voltage range of 2.7V to 3.6V, which is critical for battery-operated applications where power consumption is a key concern.

The CY62147EV30 utilizes a synchronous operation mode, which contributes to faster data transfer rates. With access times as low as 30 nanoseconds, it provides swift read and write operations, enabling quick response times in demanding computational environments. This speed is particularly beneficial for applications in telecommunications, automotive systems, and consumer electronics, where real-time data processing is essential.

Another notable characteristic of the CY62147EV30 is its low power consumption. It offers significantly reduced active and standby current levels, which is vital for extending the battery life of portable devices. The device employs advanced power management features that help optimize performance while consuming minimal energy.

Additionally, the CY62147EV30 includes a variety of features designed to enhance reliability and data integrity. These include an automatic power-down feature that reduces power usage during inactive periods and built-in write protection to safeguard against unintended data corruption. The device also adheres to strict quality and reliability standards, making it a trustworthy choice for mission-critical applications.

In summary, the Cypress CY62147EV30 is distinguished by its 1 Megabit density, low power consumption, fast access times, and enhanced reliability features. These characteristics make it an ideal solution for a wide range of applications, from automotive systems to portable devices, where performance, efficiency, and reliability are paramount. With its advanced technological design, the CY62147EV30 continues to meet the evolving demands of modern electronic applications.