Cypress Product Portfolio, Pin Configuration, Typ2 Max, CY62147EV30LL Ind’l/Auto-A, Auto-E

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CY62147EV30 MoBL®

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Product Portfolio

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Speed

 

 

 

Power Dissipation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Product

Range

 

VCC Range (V)

 

 

Operating ICC (mA)

 

 

 

 

 

(ns)

 

 

Standby ISB2 (μA)

 

 

 

 

 

 

 

 

 

f = 1 MHz

f = fmax

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Typ[2]

 

Max

 

Typ[2]

 

Max

Typ[2]

 

Max

Typ[2]

Max

CY62147EV30LL

Ind’l/Auto-A

2.2

 

3.0

 

3.6

45 ns

2

 

2.5

15

 

20

1

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E

2.2

 

3.0

 

3.6

55 ns

2

 

3

15

 

25

1

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Configuration

Figure 1. 48-Ball VFBGA (Single Chip Enable) [3, 4]

1

2

3

4

5

6

 

BLE

OE

A0

A1

A2

NC

A

IO

BHE

A3

A4

CE

IO

B

8

 

 

 

 

0

 

IO9

IO10

A5

A6

IO1

IO2

C

VSS

IO11

A17

A7

IO3

VCC

D

VCC

IO12

NC

A16

IO4

VSS

E

IO14

IO13

A14

A15

IO5

IO6

F

IO15

NC

A12

A13

WE

IO7

G

NC

A8

A9

A10

A11

NC

H

Figure 2. 48-Ball VFBGA (Dual Chip Enable)[3, 4]

1

2

3

4

5

6

 

BLE

OE

A0

A1

A2

CE2

A

IO8

BHE

A3

A4

CE1

IO0

B

IO9

IO10

A5

A6

IO1

IO2

C

VSS

IO11

A17

A7

IO3

VCC

D

VCC

IO12

NC

A16

IO4

VSS

E

IO14

IO13

A14

A15

IO5

IO6

F

IO15

NC

A12

A13

WE

IO7

G

NC

A8

A9

A10

A11

NC

H

Figure 3. 44-Pin TSOP II [3]

 

 

A4

 

1

44

 

 

A5

 

 

 

 

A3

 

2

43

 

A6

 

 

 

 

 

 

A2

 

3

42

 

 

A7

 

 

 

 

A1

 

4

41

 

 

OE

 

 

 

 

 

 

A0

 

5

40

 

 

BHE

 

 

 

 

 

 

 

 

6

39

 

BLE

 

 

CE

 

 

 

 

 

IO0

 

7

38

 

 

IO15

 

 

 

 

 

IO1

 

8

37

 

IO14

 

 

 

 

 

IO2

 

9

36

 

 

IO13

 

 

 

 

 

IO3

 

10

35

 

 

IO12

 

 

VCC

 

11

34

 

VSS

 

 

 

 

VSS

 

12

33

 

 

V

 

IO4

 

13

32

 

 

CC

 

 

 

IO

 

 

 

IO5

 

14

31

 

 

IO1110

 

 

 

 

 

IO6

 

15

30

 

 

IO9

 

IO7

 

16

29

 

IO

 

 

 

 

 

 

 

17

28

 

8

 

 

WE

 

 

 

 

NC

 

 

 

 

 

A17

 

18

27

 

A

 

A16

 

19

26

 

 

A89

 

 

 

A15

 

20

25

 

 

A

 

 

 

A14

 

21

24

 

A10

 

 

 

A13

 

22

23

 

11

 

 

 

 

A

 

 

 

 

 

 

 

 

12

 

Notes

2.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°.

3.NC pins are not connected on the die.

4.Pins H1, G2, and H6 in the BGA package are address expansion pins for 8 Mb, 16 Mb, and 32 Mb, respectively.

Document #: 38-05440 Rev. *G

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor Corporation 198 Champion CourtTyp2 Max Pin ConfigurationProduct Portfolio CY62147EV30LL Ind’l/Auto-AOperating Range Electrical CharacteristicsMaximum Ratings CapacitanceParameter Description Test Conditions Data Retention CharacteristicsThermal Resistance9 Parameters 50V UnitMin Max Read Cycle Switching CharacteristicsParameter Description Ns Ind’l/Auto-A Ns Auto-E Unit Min Write Cycle16Data OUT Previous Data Valid Switching WaveformsAddress Write Cycle No WE Controlled1, 16, 20 Data IOWrite Cycle No WE Controlled, OE LOW1 Ordering Information IOs Mode PowerTruth Table Package Diagrams Ball Vfbga 6 x 8 x 1 mm51-85087-*A ZSD AJUSYT NXRSales, Solutions, and Legal Information USB

CY62147EV30 specifications

The Cypress CY62147EV30 is a high-performance, low-power Static Random Access Memory (SRAM) device that has garnered attention in various applications due to its remarkable features and technologies. This SRAM provides a robust solution for applications requiring fast, reliable data access in a compact form factor.

One of the main features of the CY62147EV30 is its density of 1 Megabit, which is organized as 128K x 8 bits. This configuration allows for significant data storage while maintaining a small footprint, making it suitable for embedded systems and portable devices. The device operates with a voltage range of 2.7V to 3.6V, which is critical for battery-operated applications where power consumption is a key concern.

The CY62147EV30 utilizes a synchronous operation mode, which contributes to faster data transfer rates. With access times as low as 30 nanoseconds, it provides swift read and write operations, enabling quick response times in demanding computational environments. This speed is particularly beneficial for applications in telecommunications, automotive systems, and consumer electronics, where real-time data processing is essential.

Another notable characteristic of the CY62147EV30 is its low power consumption. It offers significantly reduced active and standby current levels, which is vital for extending the battery life of portable devices. The device employs advanced power management features that help optimize performance while consuming minimal energy.

Additionally, the CY62147EV30 includes a variety of features designed to enhance reliability and data integrity. These include an automatic power-down feature that reduces power usage during inactive periods and built-in write protection to safeguard against unintended data corruption. The device also adheres to strict quality and reliability standards, making it a trustworthy choice for mission-critical applications.

In summary, the Cypress CY62147EV30 is distinguished by its 1 Megabit density, low power consumption, fast access times, and enhanced reliability features. These characteristics make it an ideal solution for a wide range of applications, from automotive systems to portable devices, where performance, efficiency, and reliability are paramount. With its advanced technological design, the CY62147EV30 continues to meet the evolving demands of modern electronic applications.