Cypress CY62147EV30 manual Features, Functional Description, Logic Block Diagram

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CY62147EV30 MoBL®

4-Mbit (256K x 16) Static RAM

Features

■Very high speed: 45 ns

■Temperature ranges

❐Industrial: –40°C to +85°C

❐Automotive-A: –40°C to +85°C

❐Automotive-E: –40°C to +125°C

■Wide voltage range: 2.20V to 3.60V

■Pin compatible with CY62147DV30

■Ultra low standby power

❐Typical standby current: 1 μA

❐Maximum standby current: 7 μA (Industrial)

■Ultra low active power

❐Typical active current: 2 mA at f = 1 MHz

■Easy memory expansion with CE [1] and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Available in Pb-free 48-ball VFBGA (single/dual CE option) and 44-pin TSOPII packages

■Byte power down feature

Functional Description

The CY62147EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is

ideal for providing More Battery Life™ (MoBL→) in portable appli- cations such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:

■Deselected (CE HIGH)

■Outputs are disabled (OE HIGH)

■Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH)

■Write operation is active (CE LOW and WE LOW)

To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7) is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A17).

To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15. See the Truth Table on page 9 for a complete description of read and write modes.

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Logic Block Diagram

A10

A9

A8

A7

A6

A5

A4

A3

A2

A1

A0

ROW DECODER

DATA IN DRIVERS

256K x 16 RAM Array

SENSE AMPS

IO0–IO7

IO8–IO15

POWER DOWN

CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLUMN DECODER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BHE

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BHE

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12 13 14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE [1]

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A A A A

A A

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OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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Note

1.BGA packaged device is offered in single CE and dual CE options. In this data sheet, for CE2 such that when CE1 is LOW and CE2 is HIGH, CE is LOW. For all other cases CE is

a dual CE device, CE refers to the internal logical combination of CE1 and HIGH.

Cypress Semiconductor Corporation • 198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05440 Rev. *G

 

Revised March 31, 2009

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtProduct Portfolio Pin ConfigurationTyp2 Max CY62147EV30LL Ind’l/Auto-AMaximum Ratings Electrical CharacteristicsOperating Range CapacitanceThermal Resistance9 Data Retention CharacteristicsParameter Description Test Conditions Parameters 50V UnitParameter Description Ns Ind’l/Auto-A Ns Auto-E Unit Min Switching CharacteristicsMin Max Read Cycle Write Cycle16Address Switching WaveformsData OUT Previous Data Valid Data IO Write Cycle No WE Controlled1, 16, 20Write Cycle No WE Controlled, OE LOW1 Truth Table IOs Mode PowerOrdering Information Ball Vfbga 6 x 8 x 1 mm Package Diagrams51-85087-*A SYT AJUZSD NXRUSB Sales, Solutions, and Legal Information

CY62147EV30 specifications

The Cypress CY62147EV30 is a high-performance, low-power Static Random Access Memory (SRAM) device that has garnered attention in various applications due to its remarkable features and technologies. This SRAM provides a robust solution for applications requiring fast, reliable data access in a compact form factor.

One of the main features of the CY62147EV30 is its density of 1 Megabit, which is organized as 128K x 8 bits. This configuration allows for significant data storage while maintaining a small footprint, making it suitable for embedded systems and portable devices. The device operates with a voltage range of 2.7V to 3.6V, which is critical for battery-operated applications where power consumption is a key concern.

The CY62147EV30 utilizes a synchronous operation mode, which contributes to faster data transfer rates. With access times as low as 30 nanoseconds, it provides swift read and write operations, enabling quick response times in demanding computational environments. This speed is particularly beneficial for applications in telecommunications, automotive systems, and consumer electronics, where real-time data processing is essential.

Another notable characteristic of the CY62147EV30 is its low power consumption. It offers significantly reduced active and standby current levels, which is vital for extending the battery life of portable devices. The device employs advanced power management features that help optimize performance while consuming minimal energy.

Additionally, the CY62147EV30 includes a variety of features designed to enhance reliability and data integrity. These include an automatic power-down feature that reduces power usage during inactive periods and built-in write protection to safeguard against unintended data corruption. The device also adheres to strict quality and reliability standards, making it a trustworthy choice for mission-critical applications.

In summary, the Cypress CY62147EV30 is distinguished by its 1 Megabit density, low power consumption, fast access times, and enhanced reliability features. These characteristics make it an ideal solution for a wide range of applications, from automotive systems to portable devices, where performance, efficiency, and reliability are paramount. With its advanced technological design, the CY62147EV30 continues to meet the evolving demands of modern electronic applications.
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