Cypress CY62147EV30 Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance

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CY62147EV30 MoBL®

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. User guidelines are not tested.

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

 

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

 

 

 

Potential

–0.3V to + 3.9V

(VCCmax + 0.3V)

DC Voltage Applied to Outputs

 

 

 

in High-Z State [5, 6]

–0.3V to 3.9V

(V

CCmax

+ 0.3V)

 

 

 

 

DC Input Voltage [5, 6]

............ –0.3V to 3.9V (V

 

+ 0.3V)

 

 

 

CCmax

 

Output Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

 

>2001V

(MIL-STD-883, Method 3015)

 

 

 

Latch Up Current

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

 

Device

 

Range

Ambient

 

[7]

 

Temperature

 

VCC

CY62147EV30LL

Ind’l/Auto-A

–40°C to +85°C

 

2.2V to

 

 

 

 

 

3.6V

 

 

Auto-E

–40°C to +125°C

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics

Over the Operating Range

Parameter

Description

 

 

 

Test Conditions

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

 

 

 

Min

Typ [2]

Max

Min

Typ [2]

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH

 

IOH = –0.1 mA

2.0

 

 

2.0

 

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOH = –1.0 mA, VCC > 2.70V

2.4

 

 

2.4

 

 

V

 

 

 

 

 

 

 

VOL

Output LOW

 

IOL = 0.1 mA

 

 

0.4

 

 

0.4

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOL = 2.1 mA, VCC = 2.70V

 

 

0.4

 

 

0.4

V

 

 

 

 

 

 

 

VIH

Input HIGH

 

VCC = 2.2V to 2.7V

1.8

 

VCC + 0.3

1.8

 

VCC + 0.3

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC= 2.7V to 3.6V

2.2

 

VCC + 0.3

2.2

 

VCC + 0.3

V

 

 

 

 

 

VIL

Input LOW

 

VCC = 2.2V to 2.7V

–0.3

 

0.6

–0.3

 

0.6

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC= 2.7V to 3.6V

–0.3

 

0.8

–0.3

 

0.8

V

 

 

 

 

 

IIX

Input Leakage

 

GND < VI < VCC

–1

 

+1

–4

 

+4

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

+1

–4

 

+4

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fmax = 1/tRC

VCC = VCC(max)

 

15

20

 

15

25

mA

 

Supply Current

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

2

2.5

 

2

3

 

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

 

ISB1

Automatic CE

 

CE

> VCC

– 0.2V

 

1

7

 

1

20

μA

 

Power Down

 

VIN > VCC

– 0.2V, VIN < 0.2V

 

 

 

 

 

 

 

 

Current —

 

f = fmax

(Address and Data Only),

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CMOS Inputs

 

f = 0 (OE, BHE, BLE and WE),

 

 

 

 

 

 

 

 

 

 

VCC = 3.60V

 

 

 

 

 

 

 

ISB2 [8]

Automatic CE

 

 

> VCC

– 0.2V

 

1

7

 

1

20

μA

CE

 

Power Down

 

VIN > VCC

– 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

Current —

 

f = 0, VCC

= 3.60V

 

 

 

 

 

 

 

 

CMOS Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance

For all packages.[9]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Notes

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7.Full device AC operation assumes a minimum of 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

8.Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

9.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05440 Rev. *G

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesLogic Block Diagram Functional DescriptionCY62147EV30LL Ind’l/Auto-A Pin ConfigurationProduct Portfolio Typ2 MaxCapacitance Electrical CharacteristicsMaximum Ratings Operating RangeParameters 50V Unit Data Retention CharacteristicsThermal Resistance9 Parameter Description Test ConditionsWrite Cycle16 Switching CharacteristicsParameter Description Ns Ind’l/Auto-A Ns Auto-E Unit Min Min Max Read CycleSwitching Waveforms AddressData OUT Previous Data Valid Data IO Write Cycle No WE Controlled1, 16, 20Write Cycle No WE Controlled, OE LOW1 IOs Mode Power Truth TableOrdering Information Ball Vfbga 6 x 8 x 1 mm Package Diagrams51-85087-*A NXR AJUSYT ZSDUSB Sales, Solutions, and Legal Information

CY62147EV30 specifications

The Cypress CY62147EV30 is a high-performance, low-power Static Random Access Memory (SRAM) device that has garnered attention in various applications due to its remarkable features and technologies. This SRAM provides a robust solution for applications requiring fast, reliable data access in a compact form factor.

One of the main features of the CY62147EV30 is its density of 1 Megabit, which is organized as 128K x 8 bits. This configuration allows for significant data storage while maintaining a small footprint, making it suitable for embedded systems and portable devices. The device operates with a voltage range of 2.7V to 3.6V, which is critical for battery-operated applications where power consumption is a key concern.

The CY62147EV30 utilizes a synchronous operation mode, which contributes to faster data transfer rates. With access times as low as 30 nanoseconds, it provides swift read and write operations, enabling quick response times in demanding computational environments. This speed is particularly beneficial for applications in telecommunications, automotive systems, and consumer electronics, where real-time data processing is essential.

Another notable characteristic of the CY62147EV30 is its low power consumption. It offers significantly reduced active and standby current levels, which is vital for extending the battery life of portable devices. The device employs advanced power management features that help optimize performance while consuming minimal energy.

Additionally, the CY62147EV30 includes a variety of features designed to enhance reliability and data integrity. These include an automatic power-down feature that reduces power usage during inactive periods and built-in write protection to safeguard against unintended data corruption. The device also adheres to strict quality and reliability standards, making it a trustworthy choice for mission-critical applications.

In summary, the Cypress CY62147EV30 is distinguished by its 1 Megabit density, low power consumption, fast access times, and enhanced reliability features. These characteristics make it an ideal solution for a wide range of applications, from automotive systems to portable devices, where performance, efficiency, and reliability are paramount. With its advanced technological design, the CY62147EV30 continues to meet the evolving demands of modern electronic applications.
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