Cypress CY62147EV30 manual Switching Waveforms, Address, Data OUT Previous Data Valid

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CY62147EV30 MoBL®

Switching Waveforms

Figure 6. Read Cycle No. 1 (Address Transition Controlled)[17, 18]

tRC

ADDRESS

tOHA tAA

DATA OUT

PREVIOUS DATA VALID

 

 

 

 

DATA VALID

 

 

 

 

 

 

 

 

 

 

Figure 7. Read Cycle No. 2 (OE Controlled)[1, 18, 19]

ADDRESS

 

 

CE

 

tRC

 

 

 

 

tPD

 

t

tHZCE

 

ACE

 

OE

 

 

 

tDOE

tHZOE

 

 

BHE/BLE

tLZOE

 

 

 

 

tDBE

tHZBE

 

tLZBE

HIGH

DATA OUT

HIGHIMPEDANCE

IMPEDANCE

tLZCE

DATA VALID

 

 

 

tPU

ICC

VCC

 

50%

50%

SUPPLY

 

ISB

CURRENT

 

 

Notes

17.The device is continuously selected. OE, CE = VIL, BHE, BLE, or both = VIL.

18.WE is HIGH for read cycle.

19.Address valid before or similar to CE and BHE, BLE transition LOW.

Document #: 38-05440 Rev. *G

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor Corporation 198 Champion CourtTyp2 Max Pin ConfigurationProduct Portfolio CY62147EV30LL Ind’l/Auto-AOperating Range Electrical CharacteristicsMaximum Ratings CapacitanceParameter Description Test Conditions Data Retention CharacteristicsThermal Resistance9 Parameters 50V UnitMin Max Read Cycle Switching CharacteristicsParameter Description Ns Ind’l/Auto-A Ns Auto-E Unit Min Write Cycle16Switching Waveforms AddressData OUT Previous Data Valid Write Cycle No WE Controlled1, 16, 20 Data IOWrite Cycle No WE Controlled, OE LOW1 IOs Mode Power Truth TableOrdering Information Package Diagrams Ball Vfbga 6 x 8 x 1 mm51-85087-*A ZSD AJUSYT NXRSales, Solutions, and Legal Information USB

CY62147EV30 specifications

The Cypress CY62147EV30 is a high-performance, low-power Static Random Access Memory (SRAM) device that has garnered attention in various applications due to its remarkable features and technologies. This SRAM provides a robust solution for applications requiring fast, reliable data access in a compact form factor.

One of the main features of the CY62147EV30 is its density of 1 Megabit, which is organized as 128K x 8 bits. This configuration allows for significant data storage while maintaining a small footprint, making it suitable for embedded systems and portable devices. The device operates with a voltage range of 2.7V to 3.6V, which is critical for battery-operated applications where power consumption is a key concern.

The CY62147EV30 utilizes a synchronous operation mode, which contributes to faster data transfer rates. With access times as low as 30 nanoseconds, it provides swift read and write operations, enabling quick response times in demanding computational environments. This speed is particularly beneficial for applications in telecommunications, automotive systems, and consumer electronics, where real-time data processing is essential.

Another notable characteristic of the CY62147EV30 is its low power consumption. It offers significantly reduced active and standby current levels, which is vital for extending the battery life of portable devices. The device employs advanced power management features that help optimize performance while consuming minimal energy.

Additionally, the CY62147EV30 includes a variety of features designed to enhance reliability and data integrity. These include an automatic power-down feature that reduces power usage during inactive periods and built-in write protection to safeguard against unintended data corruption. The device also adheres to strict quality and reliability standards, making it a trustworthy choice for mission-critical applications.

In summary, the Cypress CY62147EV30 is distinguished by its 1 Megabit density, low power consumption, fast access times, and enhanced reliability features. These characteristics make it an ideal solution for a wide range of applications, from automotive systems to portable devices, where performance, efficiency, and reliability are paramount. With its advanced technological design, the CY62147EV30 continues to meet the evolving demands of modern electronic applications.