Cypress CY14E108N, CY14B102N manual Features, Functional Description, Logic Block Diagram

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ADVANCE

CY14E108L, CY14E108N

8 Mbit (1024K x 8/512K x 16) nvSRAM

Features

■20 ns, 25 ns, and 45 ns access times

■Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N)

■Hands off automatic STORE on power down with only a small capacitor

■STORE to QuantumTrap® nonvolatile elements initiated by software, device pin, or AutoStore® on power down

■RECALL to SRAM initiated by software or power up

■Infinite read, write, and recall cycles

■200,000 STORE cycles to QuantumTrap

■20 year data retention

■Single 5V +10% operation

■Commercial and industrial temperatures

■48-pin FBGA, 44 and 54-pin TSOP II packages

■Pb-free and RoHS compliance

Functional Description

The Cypress CY14E108L/CY14E108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024K words of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Logic Block Diagram

VCC

VCAP

 

Address A0 - A19[1]

CE

 

 

 

 

 

 

CY14E108L

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

CY14E108N

 

 

 

 

 

 

 

 

 

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

BHE

 

 

 

 

 

 

 

 

BLE

 

 

 

 

[1]

DQ0 - DQ7

HSB

VSS

Note

1. Address A0 - A19 and Data DQ0 - DQ7 for x8 configuration, Address A0 - A18 and Data DQ0 - DQ15 for x16 configuration.

Cypress Semiconductor Corporation • 198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-45524 Rev. *A

 

 

Revised June 24, 2008

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtX16 PinoutsTop View Not to scale Pin Definitions Device Operation Hardware Recall Power UpSram Read Sram WriteA15 A0 Mode Power Mode SelectionSoftware Store Software RecallPreventing AutoStore Mode Selection A15 A0 PowerData Protection Noise ConsiderationsMaximum Ratings DC Electrical CharacteristicsOperating Range RangeThermal Resistance CapacitanceAC Test Conditions Parameter Description Test Conditions Max UnitSram Read Cycle AC Switching CharacteristicsSram Write Cycle Software Controlled Store and Recall Cycle AutoStore and Power Up RecallHardware Store Cycle Sram Write Cycle #1 WE Controlled 13, 21, 22 Sram Write Cycle #2 CE Controlled13, 21, 22 Α α Hardware Store Cycle20 Ordering Information CY 14 E 108 L ZS P 20 X C T Part Numbering NomenclaturePin Tsop II Package DiagramsBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Document History Sales, Solutions, and Legal InformationSubmission Orig. Description of Change Date

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.
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