Cypress CY14B102N, CY14E108N manual Ball Fbga 6 mm x 10 mm x 1.2 mm

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ADVANCE

CY14E108L, CY14E108N

Package Diagrams (continued)

Figure 15. 48-ball FBGA - 6 mm x 10 mm x 1.2 mm (51-85128)

TOP VIEW

A1 CORNER

1 2 3 4 5 6

BOTTOM VIEW

A1 CORNER

Ø0.05 M C
Ø0.25 M C A B
Ø0.30±0.05(48X)
6	5	4	3	2	1

			A
			B
			B
	10.00±0.10		C
	10.00±0.10		D
			D
			E
			F
			G
			H


	A

		B
	0.53±0.05

0.25 C

0.36

6.00±0.10

0.21±0.05
0.21±0.05						0.15 C

SEATING PLANE

1.20 MAX

10.00±0.10

		A
		B
	0.75	C
5.25		D
5.25		E
		E
	2.625	F
	2.625	G
		G
		H
		1.875
		0.75
		3.75
	B	6.00±0.10
	0.15(4X)
		51-85128-*D

Document Number: 001-45524 Rev. *A

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Contents Functional Description FeaturesLogic Block Diagram Cypress Semiconductor Corporation 198 Champion CourtPinouts X16Top View Not to scale Pin Definitions Sram Read Hardware Recall Power UpDevice Operation Sram WriteSoftware Store Mode SelectionA15 A0 Mode Power Software RecallData Protection Mode Selection A15 A0 PowerPreventing AutoStore Noise ConsiderationsOperating Range DC Electrical CharacteristicsMaximum Ratings RangeAC Test Conditions CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitAC Switching Characteristics Sram Read CycleSram Write Cycle AutoStore and Power Up Recall Software Controlled Store and Recall CycleHardware Store Cycle Sram Write Cycle #1 WE Controlled 13, 21, 22 Sram Write Cycle #2 CE Controlled13, 21, 22 Α α Hardware Store Cycle20 Ordering Information Part Numbering Nomenclature CY 14 E 108 L ZS P 20 X C TPackage Diagrams Pin Tsop IIBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Sales, Solutions, and Legal Information Document HistorySubmission Orig. Description of Change Date

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.