Cypress CY14B102N, CY14E108N manual Capacitance, Thermal Resistance, AC Test Conditions

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ADVANCE

CY14E108L, CY14E108N

Capacitance

In the following table, the capacitance parameters are listed [9].

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

14

pF

 

 

VCC = 0 to 3.0V

 

 

COUT

Output Capacitance

14

pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed [9].

Parameter

Description

Test Conditions

48-FBGA

44-TSOP II

54-TSOP II

Unit

ΘJA

Thermal Resistance

Test conditions follow standard test methods

28.82

31.11

30.73

°C/W

 

(Junction to Ambient)

and procedures for measuring thermal

 

 

 

 

 

 

impedance, in accordance with EIA/JESD51.

 

 

 

 

ΘJC

Thermal Resistance

7.84

5.56

6.08

°C/W

 

(Junction to Case)

 

 

 

 

 

 

 

Figure 4. AC Test Loads

 

 

 

 

5.0V

963Ω

R1

 

OUTPUT

 

30 pF

963Ω

for tri-state specs

5.0V

R1

OUTPUT

R2

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

512Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

512Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Test Conditions

Input Pulse Levels

0V to 3V

Input Rise and Fall Times (10% - 90%)

<5 ns

Input and Output Timing Reference Levels

1.5V

Note

9. These parameters are guaranteed but not tested.

Document Number: 001-45524 Rev. *A

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtTop View Not to scale PinoutsX16 Pin Definitions Hardware Recall Power Up Device OperationSram Read Sram WriteMode Selection A15 A0 Mode PowerSoftware Store Software RecallMode Selection A15 A0 Power Preventing AutoStoreData Protection Noise ConsiderationsDC Electrical Characteristics Maximum RatingsOperating Range RangeCapacitance Thermal ResistanceAC Test Conditions Parameter Description Test Conditions Max UnitSram Write Cycle AC Switching CharacteristicsSram Read Cycle Hardware Store Cycle AutoStore and Power Up RecallSoftware Controlled Store and Recall Cycle Sram Write Cycle #1 WE Controlled 13, 21, 22 Sram Write Cycle #2 CE Controlled13, 21, 22 Α α Hardware Store Cycle20 Ordering Information Part Numbering Nomenclature CY 14 E 108 L ZS P 20 X C TPackage Diagrams Pin Tsop IIBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Submission Orig. Description of Change Date Sales, Solutions, and Legal InformationDocument History

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.
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