Cypress CY14E108N, CY14B102N manual Α α

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ADVANCE

CY14E108L, CY14E108N

Switching Waveforms (continued)

Figure 10. CE Controlled Software STORE/RECALL Cycle[17]

Figure 11. OE Controlled Software STORE/RECALL Cycle[17]

ADDRESS

tRC

ADDRESS # 1

tAS tCW

tGHAX

α α α α

tRC

ADDRESS # 6

α α α α α α

tSTORE / tRECALL

DQ (DATA)

DATA VALID

α α

	α α
DATA VALID	HIGH IMPEDANCE
DATA VALID

Document Number: 001-45524 Rev. *A

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtX16 PinoutsTop View Not to scale Pin Definitions Device Operation Hardware Recall Power UpSram Read Sram WriteA15 A0 Mode Power Mode SelectionSoftware Store Software RecallPreventing AutoStore Mode Selection A15 A0 PowerData Protection Noise ConsiderationsMaximum Ratings DC Electrical CharacteristicsOperating Range RangeThermal Resistance CapacitanceAC Test Conditions Parameter Description Test Conditions Max UnitSram Read Cycle AC Switching CharacteristicsSram Write Cycle Software Controlled Store and Recall Cycle AutoStore and Power Up RecallHardware Store Cycle Sram Write Cycle #1 WE Controlled 13, 21, 22 Sram Write Cycle #2 CE Controlled13, 21, 22 Α α Hardware Store Cycle20 Ordering Information CY 14 E 108 L ZS P 20 X C T Part Numbering NomenclaturePin Tsop II Package DiagramsBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Document History Sales, Solutions, and Legal InformationSubmission Orig. Description of Change Date

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.