Agilent Technologies E4438C manual Accessories Inputs and outputs, Transit case

General Characteristics

Accessories

Inputs and outputs

All front panel connectors can be moved to rear with Option 1EM.

Transit case Part number 9211-1296

10 MHz input	Accepts a 1, 2, 5, or 10 MHz ±10 ppm [standard timebase]
	or ±1 ppm [high-stability timebase] reference signal for
	operation with an external timebase. Nominal input
	level –3.5 to +20 dBm, impedance 50 ohms.
	[BNC, rear panel]
10 MHz output	Outputs the 10 MHz reference signal. Level nominally
	+3.9 dBm ±2 dB. Nominal output impedance 50 ohms.
	[BNC, rear panel]
Alternate power input	Accepts CMOS1 signal for synchronization of external
	data and alternate power signal timing. The damage
	levels are –0.5 to +5.5 V. [Auxiliary I/O connector,
	rear panel]
Baseband generator	Accepts 0 to +20 dBm sinewave, or TTL squarewave,
reference input	to use as reference clock for the baseband generator.
	Phase locks the internal data generator to the external
	reference; the RF frequency is still locked to the 10 MHz
	reference. Rate is 250 kHz to 100 MHz, 50 ohms
	nominal, AC coupled. [BNC, rear panel]
Burst gate input	The burst gate in connector accepts a CMOS1
	signal for gating burst power in digital modulation
	applications. The burst gating is used when you are
	externally supplying data and clock information. The
	input signal must be synchronized with the external data
	input that will be output during the burst. The burst
	power envelope and modulated data are internally
	delayed and re-synchronized. The input signal must be
	CMOS high for normal burst RF power or CW RF output
	power and CMOS low for RF off. The damage levels
	are –0.5 to +5.5 V.
	This female BNC connector is provided on signal
	generators with Option 601 or 602. On signal generators
	with Option 1EM, this input is relocated to a rear panel
	SMB connector. With Option 401, this connector is used
	for the even second synchronization input.
Coherent carrier output2	Outputs RF modulated with FM or FM, but not IQ,
	pulse or AM. Nominal power –2 dBm ±5 dB. Nominal
	impedance 50 ohms. Frequency range from > 250 MHz
	to 4 GHz. For RF carriers below this range, output
	frequency = 1 GHz – frequency of RF output. Damage
	levels 20 VDC and 13 dBm reverse RF power.
	[SMA, rear panel]

1.Rear panel inputs and outputs are 3.3 V CMOS, unless indicated otherwise. CMOS inputs will accept 5 V CMOS, 3 V CMOS, or TTL voltage levels.

2.Coherent carrier is modulated by FM or FM when enabled.

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