Cypress manual MoBL CY62128E, Features, Functional Description, Logic Block Diagram

MoBL® CY62128E

1-Mbit (128K x 8) Static RAM

Features

■Very high speed: 45 ns

■Temperature ranges

❐Industrial: –40°C to +85°C

❐Automotive-A: –40°C to +85°C

❐Automotive-E: –40°C to +125°C

■Voltage range: 4.5V to 5.5V

■Pin compatible with CY62128B

■Ultra low standby power

❐Typical standby current: 1 μA

❐Maximum standby current: 4 μA (Industrial)

■Ultra low active power

❐Typical active current: 1.3 mA at f = 1 MHz

■Easy memory expansion with CE1, CE2, and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Offered in standard Pb-free 32-pin STSOP, 32-pin SOIC, and 32-pin TSOP I packages

Functional Description

The CY62128E[1] is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL→) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW)

To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A16).

To read from the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.

Logic Block Diagram
	A0		INPUT BUFFER					IO0
								IO1
	A1
	A2	DECODERROW					AMPSSENSE	IO2
	A8
	A3
	A4							IO3
	A5		128K x 8
	A6							IO4
	A7			ARRAY
	A9							IO5
	A10							IO6
CE1	A11
								IO7
CE2	WE	COLUMN DECODER					POWER
							DOWN
	OE	12	13	14	15	16
		A	A	A	A	A

Note

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

Cypress Semiconductor Corporation • 198 Champion Court	•	San Jose, CA 95134-1709	•	408-943-2600
Document #: 38-05485 Rev. *F			Revised August 4, 2008

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