MoBL® CY62128E

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Output Current into Outputs (LOW)

............................. 20 mA

Static Discharge Voltage

> 2001V

(MIL-STD-883, Method 3015)

 

Latch up Current

> 200 mA

Ambient Temperature with

 

 

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground

 

 

 

Potential

–0.5V to 6.0V (VCC(max) + 0.5V)

DC Voltage Applied to Outputs

 

 

in High-Z State[5, 6]

–0.5V to 6.0V (V

CC(max)

+ 0.5V)

DC Input Voltage[5, 6]

 

 

–0.5V to 6.0V (V

CC(max)

+ 0.5V)

 

 

 

Electrical Characteristics (Over the Operating Range)

Operating Range

Device

Range

Ambient

[7]

Temperature

VCC

CY62128ELL

Ind’l/Auto-A

–40°C to +85°C

4.5V to 5.5V

 

 

 

 

 

Auto-E

–40°C to +125°C

 

 

 

 

 

Parameter

Description

 

 

Test Conditions

45 ns (Ind’l/Auto-A)

 

55 ns (Auto-E)

Unit

 

 

Min

Typ[3]

Max

Min

 

Typ[3]

Max

 

 

 

 

 

 

 

 

 

VOH

Output HIGH

 

IOH = –1 mA

 

2.4

 

 

2.4

 

 

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VOL

Output LOW

 

IOL = 2.1 mA

 

 

 

0.4

 

 

 

0.4

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

VCC = 4.5V to 5.5V

2.2

 

VCC + 0.5

2.2

 

 

VCC + 0.5

V

VIL

Input LOW voltage

 

VCC = 4.5V to 5.5V

–0.5

 

0.8

–0.5

 

 

0.8

V

IIX

Input Leakage

 

GND < VI < VCC

 

–1

 

+1

–4

 

 

+4

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

+1

–4

 

 

+4

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fmax = 1/tRC

 

VCC = VCC(max)

 

11

16

 

 

11

35

mA

 

Supply Current

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

1.3

2

 

 

1.3

4

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

 

 

ISB2 [8]

Automatic CE

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

1

4

 

 

1

30

μA

CE

 

 

 

Power down

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

 

Current—CMOS

 

f = 0, VCC = VCC(max)

 

 

 

 

 

 

 

 

 

Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance (For all Packages) [9]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Notes

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7.Full device AC operation assumes a 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

8.Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

9.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05485 Rev. *F

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Cypress CY62128E Maximum Ratings, Electrical Characteristics Over the Operating Range, Device Range Ambient, Gnd Vi Vcc