|
|
|
|
|
|
|
|
|
|
| MoBL® CY62128E | ||||
|
|
|
|
|
|
|
|
|
|
|
| ||||
Switching Characteristics (Over the Operating Range)[12] |
|
|
|
|
|
|
| ||||||||
Parameter |
|
|
|
|
|
| Description | 45 ns | 55 ns | Unit |
|
| |||
|
|
|
|
|
| Min | Max | Min |
| Max |
|
| |||
|
|
|
|
|
|
|
|
|
|
|
| ||||
Read Cycle |
|
|
|
|
|
|
|
|
|
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |||||||
tRC |
| Read Cycle Time | 45 |
| 55 |
|
| ns |
| ||||||
tAA |
| Address to Data Valid |
| 45 |
|
| 55 | ns |
| ||||||
tOHA |
| Data Hold from Address Change | 10 |
| 10 |
|
| ns |
| ||||||
tACE |
|
| 1 LOW and CE2 HIGH to Data Valid |
| 45 |
|
| 55 | ns |
| |||||
CE |
|
|
| ||||||||||||
tDOE |
|
|
| LOW to Data Valid |
| 22 |
|
| 25 | ns |
| ||||
OE |
|
|
| ||||||||||||
tLZOE |
|
|
| LOW to | 5 |
| 5 |
|
| ns |
| ||||
OE |
|
|
| ||||||||||||
t |
|
|
| HIGH to |
| 18 |
|
|
| ns | |||||
OE |
|
|
| 20 | |||||||||||
HZOE |
|
|
|
|
|
|
|
|
|
|
|
|
|
| |
tLZCE |
|
| 1 LOW and CE2 HIGH to | 10 |
| 10 |
|
| ns |
| |||||
CE |
|
|
| ||||||||||||
t |
|
|
|
| HIGH or CE LOW to |
| 18 |
|
|
| ns | ||||
CE | 1 |
|
|
| 20 | ||||||||||
HZCE |
|
| 2 |
|
|
|
|
|
|
| |||||
tPU |
|
| 1 LOW and CE2 HIGH to Power Up | 0 |
| 0 |
|
| ns |
| |||||
CE |
|
|
| ||||||||||||
tPD |
|
| 1 HIGH or CE2 LOW to Power Down |
| 45 |
|
| 55 | ns | ||||||
CE |
|
|
| ||||||||||||
Write Cycle[15] |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
tWC
tSCE
tAW
tHA
tSA
tPWE
tSD
tHD
tHZWE
tLZWE
Write Cycle Time | 45 |
| 55 |
| ns | ||
| 1 LOW and CE2 HIGH to Write End | 35 |
| 40 |
| ns | |
CE |
|
| |||||
Address Setup to Write End | 35 |
| 40 |
| ns | ||
Address Hold from Write End | 0 |
| 0 |
| ns | ||
Address Setup to Write Start | 0 |
| 0 |
| ns | ||
| Pulse Width | 35 |
| 40 |
| ns | |
WE |
|
| |||||
Data Setup to Write End | 25 |
| 25 |
| ns | ||
Data Hold from Write End | 0 |
| 0 |
| ns | ||
| LOW to |
| 18 |
| 20 | ns | |
WE |
| ||||||
| HIGH to | 10 |
| 10 |
| ns | |
WE |
|
|
Notes
12.Test conditions for all parameters other than
13.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
14.tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state.
15.The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
Document #: | Page 5 of 12 |
[+] Feedback