MoBL® CY62128E

 

 

 

 

 

 

 

 

 

 

 

 

Switching Characteristics (Over the Operating Range)[12]

 

 

 

 

 

 

 

Parameter

 

 

 

 

 

 

Description

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

 

 

 

 

 

 

 

 

Min

Max

Min

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

55

 

 

ns

 

tAA

 

Address to Data Valid

 

45

 

 

55

ns

 

tOHA

 

Data Hold from Address Change

10

 

10

 

 

ns

 

tACE

 

 

1 LOW and CE2 HIGH to Data Valid

 

45

 

 

55

ns

 

CE

 

 

 

tDOE

 

 

 

LOW to Data Valid

 

22

 

 

25

ns

 

OE

 

 

 

tLZOE

 

 

 

LOW to Low-Z[13]

5

 

5

 

 

ns

 

OE

 

 

 

t

 

 

 

HIGH to High-Z[13, 14]

 

18

 

 

 

ns

OE

 

 

 

20

HZOE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tLZCE

 

 

1 LOW and CE2 HIGH to Low-Z[13]

10

 

10

 

 

ns

 

CE

 

 

 

t

 

 

 

 

HIGH or CE LOW to High-Z[13, 14]

 

18

 

 

 

ns

CE

1

 

 

 

20

HZCE

 

 

2

 

 

 

 

 

 

 

tPU

 

 

1 LOW and CE2 HIGH to Power Up

0

 

0

 

 

ns

 

CE

 

 

 

tPD

 

 

1 HIGH or CE2 LOW to Power Down

 

45

 

 

55

ns

CE

 

 

 

Write Cycle[15]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

tSCE

tAW

tHA

tSA

tPWE

tSD

tHD

tHZWE

tLZWE

Write Cycle Time

45

 

55

 

ns

 

1 LOW and CE2 HIGH to Write End

35

 

40

 

ns

CE

 

 

Address Setup to Write End

35

 

40

 

ns

Address Hold from Write End

0

 

0

 

ns

Address Setup to Write Start

0

 

0

 

ns

 

Pulse Width

35

 

40

 

ns

WE

 

 

Data Setup to Write End

25

 

25

 

ns

Data Hold from Write End

0

 

0

 

ns

 

LOW to High-Z[13, 14]

 

18

 

20

ns

WE

 

 

HIGH to Low-Z[13]

10

 

10

 

ns

WE

 

 

Notes

12.Test conditions for all parameters other than tri-state parameters assume signal transition time of 3ns (1V/ns) or less, timing reference levels of 1.5V, input pulse levels of 0 to 3V, and output loading of the specified IOL/IOH as shown in the “” on page 4.

13.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

14.tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state.

15.The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.

Document #: 38-05485 Rev. *F

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Cypress CY62128E manual Switching Characteristics Over the Operating Range12, Read Cycle, Write Cycle15