Cypress CY62138CV33, CY62138CV30 manual CY62138FV30 MoBL, Features, Logic Block Diagram

Models: CY62138CV25 CY62138CV30 CY62138FV30 CY62138CV33

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CY62138FV30 MoBL®

CY62138FV30 MoBL®

2-Mbit (256K x 8) Static RAM

Features

Very high speed: 45 ns

Wide voltage range: 2.20V–3.60V

Pin compatible with CY62138CV25/30/33

Ultra low standby power

Typical standby current: 1 A

Maximum standby current: 5 A

Ultra low active power

Typical active current: 1.6 mA @ f = 1 MHz

Easy memory expansion with CE1, CE2, and OE features

Automatic power down when deselected

CMOS for optimum speed and power

Offered in Pb-free 36-ball VFBGA, 32-pin TSOP II, 32-pin SOIC, 32-pin TSOP I and 32-pin STSOP packages

Logic Block Diagram

Functional Description [1]

The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Place the device into standby mode reducing power consumption when deselected (CE1 HIGH or CE2 LOW).

To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A17).

To read from the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.

The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW).

 

 

A0

DATA IN DRIVERS

 

IO0

 

 

A1

 

 

 

 

 

 

 

IO

 

 

A2

 

 

 

 

 

 

 

1

 

 

DECODERROW

 

 

 

 

 

AMPSSENSE

 

 

 

A3

 

 

 

 

 

IO

 

 

A4

 

 

 

 

 

 

 

2

 

 

A5

 

256K x 8

 

 

IO

 

 

A6

 

 

 

 

 

 

 

3

 

 

A7

 

 

ARRAY

 

 

 

IO4

 

 

A8

 

 

 

 

 

 

 

IO5

 

 

A9

 

 

 

 

 

 

 

 

 

A10

 

 

 

 

 

 

 

 

CE1

 

A11

 

 

 

 

 

 

 

IO6

 

 

 

 

 

 

 

 

 

IO7

CE2

WE

 

COLUMN DECODER

POWER

 

 

 

 

 

 

 

 

DOWN

 

 

OE

 

12

13

14

15

16

17

 

 

 

 

 

 

 

 

 

 

A

A

A

A

A

A

 

 

Note

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

Cypress Semiconductor Corporation

• 198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 001-08029 Rev. *E

Revised March 26, 2007

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Cypress CY62138CV33, CY62138CV30 manual CY62138FV30 MoBL, Features, Logic Block Diagram, Functional Description