CY62138FV30 MoBL®

Document History Page

Document Title: CY62138FV30 MoBL®, 2-Mbit (256K x 8) Static RAM

Document Number: 001-08029

REV.

ECN NO.

Issue

Orig. of

Description of Change

Date

Change

 

 

 

 

 

 

 

 

**

463660

See ECN

NXR

New data sheet

 

 

 

 

 

*A

467351

See ECN

NXR

Added 32-pin TSOP II package, 32 pin TSOP I and 32 pin STSOP packages

 

 

 

 

Changed ball A3 from NC to CE2 in 36-ball FBGA pin out

*B

566724

See ECN

NXR

Converted from Preliminary to Final

 

 

 

 

Corrected typo in 32 pin TSOP II pin configuration diagram on page #2 (changed

 

 

 

 

pin 24 from CE1to OE and pin 22 from CE to CE1)

 

 

 

 

Changed the ICC(max) value from 2.25 mA to 2.5 mA for test condition f=1 MHz

 

 

 

 

Changed the ISB2(typ) value from 0.5 A to 1 A

 

 

 

 

Changed the ISB2(max) value from 2.5 A to 5 A

 

 

 

 

Changed the ICCDR(typ) value from 0.5 A to 1 A and ICCDR(max) value from 2.5

 

 

 

 

A to 4 A

*C

797956

See ECN

VKN

Added 32-pin SOIC package

 

 

 

 

Updated VIL spec for SOIC, TSOP-II, TSOP-I, and STSOP packages on Electrical

 

 

 

 

characteristics table

*D

809101

See ECN

VKN

Corrected typo in the Ordering Information table

 

 

 

 

 

*E

940341

See ECN

VKN

Added footnote #7 related to ISB2 and ICCDR

Document #: 001-08029 Rev. *E

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Cypress CY62138CV33, CY62138CV30, CY62138CV25, CY62138FV30 manual Document History, Issue Orig. Description of Change Date

CY62138CV25, CY62138CV30, CY62138FV30, CY62138CV33 specifications

The Cypress CY62138 series, which includes the CY62138CV30, CY62138CV33, CY62138CV25, and CY62138FV30, represents a family of high-performance CMOS Static Random Access Memory (SRAM) devices. These components are widely utilized in various applications due to their speed, density, and reliability.

One of the key features of the CY62138 series is its memory density. These SRAMs provide 2Megwords x 8Bit (2M x 8) configurations, making them suitable for applications that require substantial memory capacity without the complexities associated with dynamic RAM technologies. The components are built using advanced CMOS technology, which enables low power consumption while maintaining high-speed performance.

The devices in this series operate under a voltage range of 2.7V to 3.6V for the CY62138CV models and can operate at clock speeds of 30ns, 33ns, and 25ns, depending on the specific variant. The CY62138FV30 variant, optimized for fast operation, can achieve access times as low as 30ns. This speed is particularly advantageous in applications such as buffering, caching, and other scenarios where rapid data access is critical.

Another prominent feature is the CY62138 series' support for a straightforward interface, which simplifies design integration. The SRAMs boast a asynchronous operation that eliminates the need for complex timing requirements, thereby easing the design process for engineers. The devices support both byte and word access modes, providing flexibility in handling data.

In terms of reliability, the CY62138 SRAMs are designed to operate over an extensive temperature range, making them suitable for harsh environments. They also feature a write protection mechanism, ensuring that data integrity is maintained during unexpected power fluctuations.

In summary, the Cypress CY62138 series combines high density, rapid access times, low power consumption, and robust reliability features, making it a highly effective choice for a wide range of applications, including telecommunications, industrial control systems, and consumer electronics. As technology evolves, devices from this series continue to meet the demands for reliable, high-speed memory solutions in various sectors.