CY62138FV30 MoBL®

Switching Characteristics (Over the Operating Range) [11]

 

Parameter

 

 

 

 

 

 

Description

 

45 ns

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

45

 

 

ns

tAA

 

Address to Data Valid

 

 

45

ns

tOHA

 

Data Hold from Address Change

10

 

 

ns

tACE

 

 

1 LOW and CE2 HIGH to Data Valid

 

 

45

ns

CE

 

tDOE

 

 

 

 

LOW to Data Valid

 

 

22

ns

OE

 

tLZOE

 

 

 

 

LOW to Low-Z [12]

5

 

 

ns

OE

 

 

tHZOE

 

 

 

 

HIGH to High-Z [12,13]

 

 

18

ns

OE

 

tLZCE

 

 

1 LOW and CE2 HIGH to Low Z [12]

10

 

 

ns

CE

 

 

t

 

 

 

 

 

 

HIGH or CE

LOW to High-Z [12, 13]

 

 

18

ns

HZCE

 

CE

1

 

 

 

 

 

2

 

 

 

 

tPU

 

 

1 LOW and CE2 HIGH to Power Up

0

 

 

ns

CE

 

 

tPD

 

 

1 HIGH or CE2 LOW to Power Down

 

 

45

ns

CE

 

Write Cycle [14]

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

45

 

 

ns

tSCE

 

 

1 LOW and CE2 HIGH to Write End

35

 

 

ns

CE

 

 

tAW

 

Address Setup to Write End

35

 

 

ns

tHA

 

Address Hold from Write End

0

 

 

ns

tSA

 

Address Setup to Write Start

0

 

 

ns

tPWE

 

 

 

 

Pulse Width

 

35

 

 

ns

WE

 

 

 

tSD

 

Data Setup to Write End

25

 

 

ns

tHD

 

Data Hold from Write End

0

 

 

ns

tHZWE

 

 

 

 

LOW to High-Z [12, 13]

 

 

18

ns

WE

 

tLZWE

 

 

 

 

HIGH to Low-Z [12]

10

 

 

ns

WE

 

 

Notes

11.Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the ““AC Test Loads and Waveforms” on page 4” .

12.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

13.tHZOE, tHZCE, and tHZWE transitions are measured when the output enters a high impedance state.

14.The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. Reference the data input setup and hold timing to the edge of the signal that terminates the write.

Document #: 001-08029 Rev. *E

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Cypress CY62138CV33, CY62138CV30, CY62138CV25, CY62138FV30 Parameter Description 45 ns Unit Min, Read Cycle, Write Cycle

CY62138CV25, CY62138CV30, CY62138FV30, CY62138CV33 specifications

The Cypress CY62138 series, which includes the CY62138CV30, CY62138CV33, CY62138CV25, and CY62138FV30, represents a family of high-performance CMOS Static Random Access Memory (SRAM) devices. These components are widely utilized in various applications due to their speed, density, and reliability.

One of the key features of the CY62138 series is its memory density. These SRAMs provide 2Megwords x 8Bit (2M x 8) configurations, making them suitable for applications that require substantial memory capacity without the complexities associated with dynamic RAM technologies. The components are built using advanced CMOS technology, which enables low power consumption while maintaining high-speed performance.

The devices in this series operate under a voltage range of 2.7V to 3.6V for the CY62138CV models and can operate at clock speeds of 30ns, 33ns, and 25ns, depending on the specific variant. The CY62138FV30 variant, optimized for fast operation, can achieve access times as low as 30ns. This speed is particularly advantageous in applications such as buffering, caching, and other scenarios where rapid data access is critical.

Another prominent feature is the CY62138 series' support for a straightforward interface, which simplifies design integration. The SRAMs boast a asynchronous operation that eliminates the need for complex timing requirements, thereby easing the design process for engineers. The devices support both byte and word access modes, providing flexibility in handling data.

In terms of reliability, the CY62138 SRAMs are designed to operate over an extensive temperature range, making them suitable for harsh environments. They also feature a write protection mechanism, ensuring that data integrity is maintained during unexpected power fluctuations.

In summary, the Cypress CY62138 series combines high density, rapid access times, low power consumption, and robust reliability features, making it a highly effective choice for a wide range of applications, including telecommunications, industrial control systems, and consumer electronics. As technology evolves, devices from this series continue to meet the demands for reliable, high-speed memory solutions in various sectors.