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  | CY62138F MoBL® | 
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Switching Characteristics (Over the Operating Range) [11]  | 
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  | Parameter | 
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  | Description | 
  | 45 ns | Unit | 
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  | Min | 
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Read Cycle | 
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tRC  | 
  | Read Cycle Time  | 45  | 
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  | ns  | 
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tAA  | 
  | Address to Data Valid  | 
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  | 45  | ns  | 
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tOHA  | 
  | Data Hold from Address Change  | 10  | 
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  | ns  | 
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tACE  | 
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  | 1 LOW and CE2 HIGH to Data Valid  | 
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  | 45  | ns  | 
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CE  | 
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tDOE  | 
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  | LOW to Data Valid  | 
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  | 22  | ns  | 
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OE  | 
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tLZOE  | 
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  | LOW to   | 5  | 
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  | ns  | 
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OE  | 
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tHZOE  | 
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  | HIGH to   | 
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  | 18  | ns  | 
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OE  | 
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tLZCE  | 
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  | 1 LOW and CE2 HIGH to Low Z [12]  | 10  | 
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CE  | 
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t  | 
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  | HIGH or CE  | LOW to   | 
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  | 18  | ns  | 
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HZCE  | 
  | CE  | 1  | 
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tPU  | 
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  | 1 LOW and CE2 HIGH to power up  | 0  | 
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  | ns  | 
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CE  | 
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tPD  | 
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  | 1 HIGH or CE2 LOW to power down  | 
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  | 45  | ns  | 
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CE  | 
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Write Cycle [14] | 
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tWC  | 
  | Write Cycle Time  | 45  | 
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tSCE  | 
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  | 1 LOW and CE2 HIGH to Write End  | 35  | 
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CE  | 
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tAW  | 
  | Address Setup to Write End  | 35  | 
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  | ns  | 
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tHA  | 
  | Address Hold from Write End  | 0  | 
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  | ns  | 
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tSA  | 
  | Address Setup to Write Start  | 0  | 
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  | ns  | 
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tPWE  | 
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  | Pulse Width  | 
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  | ns  | 
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WE  | 
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tSD  | 
  | Data Setup to Write end  | 25  | 
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tHD  | 
  | Data Hold from Write End  | 0  | 
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tHZWE  | 
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  | 18  | ns  | 
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WE  | 
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tLZWE  | 
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  | HIGH to  | 10  | 
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  | ns  | 
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WE  | 
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Notes
11.Test conditions for all parameters other than 
12.At any given temperature and voltage condition, tHZCE is less than tLZCE , tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
13.tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state.
14.The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
Document #:   | Page 5 of 10  | 
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