Cypress CY62148EV30 Document History Page, Document Number, Revision, Submission, Orig. of, Date

Models: CY62148EV30

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Document History Page

MoBL® CY62148EV30

Document History Page

Document Title: CY62148EV30 MoBL® 4-Mbit (512K x 8) Static RAM

Document Number: 38-05576

Revision

ECN

Submission

Orig. of

Description of Change

 

 

Date

Change

 

 

 

 

 

 

**

223225

See ECN

AJU

New data sheet

 

 

 

 

 

*A

247373

See ECN

SYT

Changed from Advance Information to Preliminary

 

 

 

 

Moved Product Portfolio to Page 2

 

 

 

 

Changed VCC stabilization time in footnote #7 from 100 μs to 200 μs

 

 

 

 

Changed ICCDR from 2.0 μA to 2.5 μA

 

 

 

 

Changed typo in Data Retention Characteristics (tR) from 100 μs to tRC ns

 

 

 

 

Changed tOHA from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin

 

 

 

 

Changed tHZOE, tHZWE from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for

 

 

 

 

45 ns Speed Bin

 

 

 

 

Changed tSCE from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns

 

 

 

 

Speed Bin

 

 

 

 

Changed tHZCE from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns

 

 

 

 

Speed Bin

 

 

 

 

Changed tSD from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for

 

 

 

 

45 ns Speed Bin

 

 

 

 

Changed tDOE from 15 to 18 ns for 35 ns Speed Bin

 

 

 

 

Changed Ordering Information to include Pb-Free Packages

*B

414807

See ECN

ZSD

Changed from Preliminary information to Final

 

 

 

 

Changed the address of Cypress Semiconductor Corporation on Page #1 from

 

 

 

 

“3901 North First Street” to “198 Champion Court”

 

 

 

 

Removed 35ns Speed Bin

 

 

 

 

Removed “L” version of CY62148EV30

 

 

 

 

Changed ball C3 from DNU to NC.

 

 

 

 

Removed the redundant footnote on DNU.

 

 

 

 

Changed ICC (max) value from 2 mA to 2.5 mA and ICC (Typ) value from

 

 

 

 

1.5 mA to 2 mA at f=1 MHz

 

 

 

 

Changed ICC (Typ) value from 12 mA to 15 mA at f = fmax

 

 

 

 

Changed ISB1 and ISB2 Typ values from 0.7 μA to 1 μA and Max values from 2.5

 

 

 

 

μA to 7 μA.

 

 

 

 

Changed the AC test load capacitance value from 50pF to 30pF.

 

 

 

 

Changed ICCDR from 2.5 μA to 7 μA.

 

 

 

 

Added ICCDR typical value.

 

 

 

 

Changed tLZOE from 3 ns to 5 ns

 

 

 

 

Changed tLZCE and tLZWE from 6 ns to 10 ns

 

 

 

 

Changed tHZCE from 22 ns to 18 ns

 

 

 

 

Changed tPWE from 30 ns to 35 ns.

 

 

 

 

Changed tSD from 22 ns to 25 ns.

 

 

 

 

Updated the package diagram 36-pin VFBGA from *B to *C

 

 

 

 

Added 32-pin SOIC package diagram and pin diagram

 

 

 

 

Updated the ordering information table and replaced the Package Name column

 

 

 

 

with Package Diagram.

*C

464503

See ECN

NXR

Included Automotive Range in product offering

 

 

 

 

Updated Thermal Resistance table

 

 

 

 

Updated the Ordering Information

*D

833080

See ECN

VKN

Added footnote 8

 

 

 

 

Added VILspec for SOIC package

*E

890962

See ECN

VKN

Removed Automotive part and its related information

 

 

 

 

Added footnote 2 related to SOIC package

 

 

 

 

Added footnote 9 related to ISB2

 

 

 

 

Added AC values for 55 ns Industrial-SOIC range

 

 

 

 

Updated Ordering Information table

Document #: 38-05576 Rev. *G

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Cypress Document History Page, Document Title CY62148EV30 MoBL 4-Mbit 512K x 8 Static RAM, Document Number, Revision