MoBL® CY62148EV30

Capacitance (For All packages) [10]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Thermal Resistance [10]

Parameter

Description

Test Conditions

VFBGA

TSOP II

SOIC

Unit

Package

Package

Package

 

 

 

 

ΘJA

Thermal Resistance

Still Air, soldered on a 3 x 4.5 inch,

72

75.13

55

°C/W

 

(Junction to Ambient)

two-layer printed circuit board

 

 

 

 

ΘJC

Thermal Resistance

 

8.86

8.95

22

°C/W

 

(Junction to Case)

 

 

 

 

 

AC Test Loads and Waveforms

R1

VCC

ALL INPUT PULSES

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

 

 

VCC

 

 

 

 

 

 

 

 

 

 

10%

 

 

 

 

 

90%

R2

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise Time = 1 V/ns

 

 

 

 

 

 

 

Equivalent to:

THEVENIN EQUIVALENT

OUTPUT

 

 

 

RTH

 

 

 

 

V

 

 

 

 

 

 

 

90%

10%

Fall Time = 1 V/ns

Parameters

2.50V

3.0V

Unit

R1

16667

1103

Ω

 

 

 

 

R2

15385

1554

Ω

 

 

 

 

RTH

8000

645

Ω

VTH

1.20

1.75

V

Data Retention Characteristics (Over the Operating Range)

Parameter

Description

 

 

Conditions

 

Min

Typ [4]

Max

Unit

VDR

VCC for Data Retention

 

 

 

 

1.5

 

 

V

ICCDR [9]

Data Retention Current

VCC = 1.5V,

 

> VCC – 0.2V,

Ind’l/Auto-A

 

0.8

7

μA

CE

 

 

VIN > VCC – 0.2V or VIN <

 

 

 

 

 

 

 

0.2V

 

 

 

 

 

tCDR [10]

Chip Deselect to Data Retention Time

 

 

 

 

0

 

 

ns

t [11]

Operation Recovery Time

 

 

 

 

t

 

 

ns

R

 

 

 

 

 

RC

 

 

 

Data Retention Waveform

 

 

VCC(min)

DATA RETENTION MODE

VCC(min)

V

CC

V

> 1.5V

 

tCDR

DR

 

tR

 

 

 

 

CE

 

 

 

 

Notes

10.Tested initially and after any design or process changes that may affect these parameters.

11.Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

Document #: 38-05576 Rev. *G

Page 4 of 12

[+] Feedback

Page 4
Image 4
Cypress CY62148EV30 manual Thermal Resistance, AC Test Loads and Waveforms, Data Retention Waveform, Vfbga Tsop Soic

CY62148EV30 specifications

Cypress CY62148EV30 is a high-performance static random-access memory (SRAM) module renowned for its speed, low power consumption, and versatile applications in various electronic systems. With a storage capacity of 2 megabits (256K x 8 bits), this SRAM is ideal for developers seeking reliable memory solutions for high-speed computing tasks.

One of the standout features of the CY62148EV30 is its fast access time, which can be as low as 30 nanoseconds, allowing for rapid data retrieval and storage. This makes it particularly well-suited for applications that require quick response times, such as embedded systems, telecommunications, and automotive electronics.

The CY62148EV30 is built using advanced CMOS technology, resulting in a low standby current that significantly prolongs battery life in portable devices. This characteristic is crucial for mobile applications where power efficiency is paramount. The SRAM operates on a wide voltage range, typically between 2.7V and 3.6V, accommodating various system designs and enhancing compatibility with different voltage levels prevalent in modern electronics.

The device features a simple asynchronous interface with straightforward read and write operations. Its dual-port capability enables simultaneous access by multiple devices, enhancing performance in multi-processor or multi-user environments. This is particularly beneficial in networking applications where high-speed data exchange is essential.

Furthermore, the CY62148EV30 is designed with high reliability in mind. It includes built-in features such as data retention voltage, which ensures that data is preserved even in low power scenarios. Additionally, the device supports a wide temperature range, making it capable of functioning effectively in diverse environmental conditions.

The versatility of the CY62148EV30 extends to various applications, including cache memory for microcontrollers, buffers in communication systems, and data storage in digital signal processing environments. Its robust characteristics and performance capabilities make it a preferred choice for engineers seeking a high-quality, reliable SRAM solution.

In summary, the Cypress CY62148EV30 is an exemplary SRAM offering that combines high speed, low power consumption, and versatile application compatibility. With its advanced technology, fast access times, low standby current, and reliability features, it stands out as a key component in a myriad of modern electronic systems.