CY62157E MoBL®

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

Power Applied

–55°C to + 125°C

Supply Voltage to Ground

 

Potential

–0.5V to 6.0V

DC Voltage Applied to Outputs

 

in High Z State[6, 7]

–0.5V to 6.0V

Electrical Characteristics (Over the Operating Range)

DC Input Voltage[6, 7]

 

–0.5V to 6.0V

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

 

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch-Up Current

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

Ambient

VCC[8]

Device

Range

Temperature

CY62157E

Industrial

–40°C to +85°C

4.5V to 5.5V

 

 

 

 

 

Automotive

–40°C to +125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

45 ns (Industrial)

55 ns (Automotive)

 

Parameter

Description

 

 

Test Conditions

Min

Typ[4]

Max

Min

Typ[4]

Max

Unit

VOH

Output HIGH

 

IOH = –1 mA

VCC = 4.5V

2.4

 

 

2.4

 

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VOL

Output LOW

 

IOL = 2.1 mA

VCC = 4.5V

 

 

0.4

 

 

0.4

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH

 

VCC = 4.5V to 5.5V

2.2

 

VCC + 0.5

2.2

 

VCC + 0.5

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input LOW

 

VCC = 4.5V to 5.5V

–0.5

 

0.8

–0.5

 

0.8

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

IIX

Input Leakage

 

GND < VI < VCC

–1

 

+1

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

+1

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fmax = 1/tRC

VCC = VCCmax

 

18

25

 

18

35

 

 

Supply

 

f = 1 MHz

IOUT = 0 mA

 

1.8

3

 

1.8

4

mA

 

Current

 

 

 

CMOS levels

 

 

 

 

 

 

 

ISB1

Automatic CE

 

 

1 > VCC 0.2V, CE2 < 0.2V,

 

2

8

 

2

30

A

CE

 

Power-Down

 

VIN > VCC – 0.2V, VIN < 0.2V,

 

 

 

 

 

 

 

 

Current —

 

f = fmax (Address and Data Only),

 

 

 

 

 

 

 

 

CMOS Inputs

 

f = 0 (OE, BHE, BLE and

 

 

 

 

 

 

 

 

 

 

WE),

 

 

 

 

 

 

 

 

 

 

VCC = 3.60V

 

 

 

 

 

 

 

 

 

 

ISB2

Automatic CE

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

2

8

 

2

30

A

CE

 

Power-Down

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

Current —

 

f = 0, VCC = 3.60V

 

 

 

 

 

 

 

 

CMOS Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance[9]

Parameter

Description

Test Conditions

Max

Unit

 

 

 

 

 

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = VCC(typ)

10

pF

COUT

Output Capacitance

 

10

pF

Notes:

6.VIL(min) = –2.0V for pulse durations less than 20 ns for I < 30 mA.

7.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

8.Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization.

9.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05695 Rev. *C

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Cypress CY62157E manual Maximum Ratings, Electrical Characteristics Over the Operating Range, Capacitance9