CY62157E MoBL®

Switching Characteristics Over the Operating Range [12]

 

 

 

 

 

 

 

 

 

 

45 ns

 

 

55 ns

 

Parameter

 

 

 

 

 

 

 

Description

Min

 

Max

Min

 

Max

Unit

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

 

45

 

 

55

 

 

ns

tAA

 

Address to Data Valid

 

 

45

 

 

55

ns

tOHA

 

Data Hold from Address Change

10

 

 

10

 

 

ns

tACE

 

 

1 LOW and CE2 HIGH to Data Valid

 

 

45

 

 

55

ns

CE

 

 

 

tDOE

 

 

 

 

LOW to Data Valid

 

 

22

 

 

25

ns

OE

 

 

 

tLZOE

 

 

 

 

LOW to LOW Z[13]

5

 

 

5

 

 

ns

OE

 

 

 

tHZOE

 

 

 

 

HIGH to High Z[13, 14]

 

 

18

 

 

20

ns

OE

 

 

 

t

 

 

 

 

 

LOW and CE

HIGH to Low Z[13]

10

 

 

10

 

 

ns

CE

1

 

 

 

LZCE

 

 

2

 

 

 

 

 

 

 

 

t

 

 

 

 

 

HIGH and CE

LOW to High Z[13, 14]

 

 

18

 

 

20

ns

CE

1

 

 

 

HZCE

 

 

2

 

 

 

 

 

 

 

 

tPU

 

 

1 LOW and CE2 HIGH to Power-Up

0

 

 

0

 

 

ns

CE

 

 

 

tPD

 

 

1 HIGH and CE2 LOW to Power-Down

 

 

45

 

 

55

ns

CE

 

 

 

tDBE

 

 

 

 

 

 

 

 

 

 

 

45

 

 

55

ns

BLE/BHE LOW to Data Valid

 

 

 

tLZBE

 

 

 

 

 

 

 

 

 

10

 

 

10

 

 

ns

BLE/BHE LOW to Low Z[13]

 

 

 

tHZBE

 

 

 

 

 

 

 

 

 

 

 

18

 

 

20

ns

BLE/BHE HIGH to HIGH Z[13, 14]

 

 

 

Write Cycle[15]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

 

45

 

 

55

 

 

ns

tSCE

 

 

1 LOW and CE2 HIGH to Write End

35

 

 

40

 

 

ns

CE

 

 

 

tAW

 

Address Set-Up to Write End

35

 

 

40

 

 

ns

tHA

 

Address Hold from Write End

0

 

 

0

 

 

ns

tSA

 

Address Set-Up to Write Start

0

 

 

0

 

 

ns

tPWE

 

 

 

 

Pulse Width

 

35

 

 

40

 

 

ns

WE

 

 

 

 

tBW

 

 

 

 

 

 

 

 

 

35

 

 

40

 

 

ns

BLE/BHE LOW to Write End

 

 

 

tSD

 

Data Set-Up to Write End

25

 

 

25

 

 

ns

tHD

 

Data Hold from Write End

0

 

 

0

 

 

ns

tHZWE

 

 

 

 

LOW to High-Z[13, 14]

 

 

18

 

 

20

ns

WE

 

 

 

tLZWE

 

 

 

 

HIGH to Low-Z[13]

10

 

 

10

 

 

ns

WE

 

 

 

Notes:

12.Test conditions for all parameters other than Tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.

13.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

14.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.

15.The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the Write.

Document #: 38-05695 Rev. *C

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Cypress CY62157E Switching Characteristics Over the Operating Range, 45 ns 55 ns Parameter Description Min, Write Cycle