Write Cycle 3 WE Controlled, OE LOW20 | Cypress CY62157E specs

CY62157E MoBL®

Write Cycle 3 (WE Controlled, OE LOW)[20, 21]

Document #: 38-05695 Rev. *C

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Contents

Features Logic Block DiagramFunctional Description1 Cypress Semiconductor Corporation Product Portfolio Tsop Vfbga Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range Capacitance9 Data Retention Characteristics Over the Operating Range Thermal Resistance9AC Test Loads and Waveforms Data Retention Waveform11 Switching Characteristics Over the Operating Range 45 ns 55 ns Parameter Description MinMin Max Unit Read Cycle Write Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled16Read Cycle 2 OE Controlled17 50% Write Cycle 1 WE Controlled 15, 19, 20 Write Cycle 2 CE 1 or CE 2 Controlled 15, 19, 20 Write Cycle 3 WE Controlled, OE LOW20 Write Cycle 4 BHE/BLE Controlled, OE LOW20 Inputs/Outputs Mode Power Truth TableOrdering Information BHE BLE Package Diagrams Pin Tsop II Ball Vfbga 6 x 8 x 1 mm REV ECN no Issue Date Orig. Description of ChangeDocument History