CY62167DV18 MoBL®
Document #: 38-05326 Rev. *C Page 3 of 11
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential. –0.2V to VCCmax + 0.2V
DC Voltage Applied to Outputs
in High-Z State[4, 5]...........................–0.2V to VCCmax + 0.2V
DC Input Voltage[4, 5]........................–0.2V to VCCmax + 0.2V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.....................................................> 200 mA
Operating Range
Range Ambient
Tempe ratu re VCC[6]
Industrial –40°C to +85°C 1.65V to 1.95V
DC Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
55 ns
UnitMin Typ[2] Max
VOH Output HIGH Voltage IOH = −0.1 mA 1.4 V
VOL Output LOW Voltage IOL = 0.1 mA 0.2 V
VIH Input HIGH Voltage 1.4 VCC + 0.2 V
VIL Input LOW Voltage –0.2 0.4 V
IIX Input Leakage Current GND < VI < VCC –1 +1 µA
IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 µA
ICC VCC Operating Supply Current f = fMAX = 1/tRC VCC = 1.95V, IOUT = 0 mA,
CMOS level
15 30 mA
f = 1 MHz 1.5 5
ISB1 Automatic CE Power down
Current − CMOS Inputs
CE1 > VCC − 0.2V, CE2 < 0.2V,
VIN > VCC − 0.2V, VIN < 0.2V,
f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
2.5 20 µA
ISB2 Automatic CE Power down
Current − CMOS Inputs
CE1 > VCC − 0.2V, CE2 < 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V,
f = 0, VCC=1.95V
2.5 20 µA
Notes
4. VIL(min) = –2.0V for pulse durations less than 20 ns.
5. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
6. Full device AC operation requires linear VCC ramp from 0 to VCC(min) and VCC must be stable at VCC(min) for 500 µs.
7. Tested initially and after any design or process changes that may affect these parameters.
Capacitance [7]
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz, VCC = VCC(typ) 6pF
COUT Output Capacitance 8 pF
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