CY62167DV18 MoBL

Maximum Ratings

 

 

 

 

 

 

 

 

DC Input Voltage[4, 5]

–0.2V to VCCmax + 0.2V

Exceeding the maximum ratings may impair the useful life of

Output Current into Outputs (LOW)

 

 

20 mA

Static Discharge Voltage

 

 

> 2001V

the device. These user guidelines are not tested.

 

 

 

 

Storage Temperature

 

–65°C to +150°C

(MIL-STD-883, Method 3015)

 

 

 

 

 

Latch up Current

 

 

 

 

 

 

> 200 mA

Ambient Temperature with

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Power Applied

–55°C to +125°C

Operating Range

 

 

 

 

 

Supply Voltage to Ground Potential . –0.2V to VCCmax + 0.2V

 

 

 

 

 

 

 

 

 

 

Range

 

Ambient

 

 

 

[6]

 

DC Voltage Applied to Outputs

 

 

 

 

 

 

 

 

 

Temperature

 

 

 

VCC

 

in High-Z State[4, 5]

–0.2V to V

 

 

 

+ 0.2V

 

 

 

 

 

 

 

 

 

 

CCmax

Industrial

 

–40°C to +85°C

 

 

1.65V to 1.95V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Electrical Characteristics (Over the Operating Range)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

55 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

 

 

 

 

 

Test Conditions

 

Min

 

Typ[2]

 

Max

Unit

VOH

Output HIGH Voltage

 

 

 

 

IOH = 0.1 mA

 

 

 

1.4

 

 

 

 

 

V

VOL

Output LOW Voltage

 

 

 

 

IOL = 0.1 mA

 

 

 

 

 

 

 

 

0.2

V

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

1.4

 

 

 

 

VCC + 0.2

V

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

–0.2

 

 

 

 

0.4

V

IIX

Input Leakage Current

 

 

 

 

GND < VI < VCC

 

 

 

–1

 

 

 

 

+1

A

IOZ

Output Leakage Current

 

 

 

GND < VO < VCC, Output Disabled

 

–1

 

 

 

 

+1

A

ICC

VCC Operating Supply Current

 

f = fMAX = 1/tRC

 

VCC = 1.95V, IOUT = 0 mA,

 

 

15

 

 

30

mA

 

 

 

 

 

 

 

 

 

 

CMOS level

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

1.5

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

Automatic CE Power down

 

 

 

 

1 > VCC 0.2V, CE2 < 0.2V,

 

 

 

2.5

 

 

20

A

 

 

 

CE

 

 

 

 

 

 

Current CMOS Inputs

 

 

 

 

VIN > VCC 0.2V, VIN < 0.2V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX (Address and Data Only),

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 0 (OE, WE, BHE and BLE)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2

Automatic CE Power down

 

 

 

 

1 > VCC 0.2V, CE2 < 0.2V,

 

 

 

2.5

 

 

20

A

 

 

 

CE

 

 

 

 

 

 

Current CMOS Inputs

 

 

 

 

VIN > VCC 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 0, VCC=1.95V

 

 

 

 

 

 

 

 

 

 

Capacitance [7]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

 

 

 

 

 

Test Conditions

 

Max

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

CIN

Input Capacitance

 

 

TA = 25°C, f = 1 MHz, VCC = VCC(typ)

6

 

 

 

 

pF

 

COUT

Output Capacitance

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

pF

 

Notes

4.VIL(min) = –2.0V for pulse durations less than 20 ns.

5.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

6.Full device AC operation requires linear VCC ramp from 0 to VCC(min) and VCC must be stable at VCC(min) for 500 s.

7.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05326 Rev. *C

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Cypress CY62167DV18 manual Maximum Ratings, DC Electrical Characteristics Over the Operating Range, Capacitance

CY62167DV18 specifications

The Cypress CY62167DV18 is a high-performance, low-power static RAM (SRAM) device designed for a variety of applications where speed and efficiency are critical. This memory chip is especially notable for its compact footprint and advanced features, making it ideal for use in portable electronics, consumer products, telecommunications, and networking equipment.

One of the main features of the CY62167DV18 is its access time of 10 nanoseconds, allowing for rapid data retrieval and processing. With a data width of 16 bits, the device provides significant data bandwidth, which is essential for modern applications requiring fast processing capabilities. It operates on a power supply voltage of 1.8V, thereby ensuring low power consumption, which is a crucial factor in battery-operated devices.

The CY62167DV18 employs Cypress’s advanced SRAM technology, which improves speed while reducing latency. This SRAM is fabricated using a highly reliable process technology that enhances durability and performance. Additionally, the chip's static nature eliminates the need for refresh cycles, contributing to quick access times and more straightforward system designs compared to dynamic RAM (DRAM).

Another characteristic of the CY62167DV18 is its compatibility with various memory bus standards, including the popular 32-bit asynchronous interface. This adaptability allows the chip to easily integrate into existing designs without requiring major modifications. Furthermore, the device supports a wide temperature range, making it suitable for both consumer and industrial applications.

The CY62167DV18 comes with built-in features such as a chip enable input (CE), write enable input (WE), and output enable input (OE). These functionalities streamline control and management of memory access, enabling engineers to design efficient and reliable systems. The chip is available in a compact 48-ball BGA (Ball Grid Array) package, which saves space on printed circuit boards and enhances thermal performance.

In summary, the Cypress CY62167DV18 is a robust, high-speed SRAM solution that combines advanced technology with low power consumption. Its impressive access times, low-voltage operation, compatibility with multiple standards, and compact design make it a versatile choice for a broad range of applications, from consumer electronics to sophisticated industrial systems. As the demand for faster and more efficient memory solutions continues to grow, the CY62167DV18 stands out as a reliable option for developers seeking to enhance their product performance.