CY62167DV18 MoBL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching Characteristics (Over the Operating Range)[10]

 

 

 

 

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

Description

 

55 ns

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

 

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

 

 

55

 

 

ns

 

tAA

 

Address to Data Valid

 

 

55

ns

 

tOHA

 

Data Hold from Address Change

10

 

 

ns

 

tACE

 

 

1 LOW and CE2 HIGH to Data Valid

 

 

55

ns

 

CE

 

 

tDOE

 

 

 

 

LOW to Data Valid

 

 

25

ns

 

OE

 

 

t

 

 

 

 

LOW to LOW Z[11]

5

 

 

ns

 

OE

 

 

 

LZOE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

HIGH to High Z[11, 12]

 

 

20

ns

 

OE

 

 

HZOE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

 

LOW and CE

 

HIGH to Low Z[11]

10

 

 

ns

 

CE

1

2

 

 

 

LZCE

 

 

 

 

 

 

 

 

 

 

 

 

 

tHZCE

 

 

1 HIGH and CE2 LOW to High Z[11, 12]

 

 

20

ns

 

CE

 

 

tPU

 

 

1 LOW and CE2 HIGH to Power up

0

 

 

ns

 

CE

 

 

 

tPD

 

 

1 HIGH and CE2 LOW to Power down

 

 

55

ns

 

CE

 

 

tDBE

 

BLE/BHE LOW to Data Valid

 

 

55

ns

 

tLZBE

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

ns

 

BLE/BHE LOW to Low Z[11]

 

 

 

tHZBE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

ns

 

BLE/BHE HIGH to HIGH Z[11, 12]

 

 

Write Cycle[13]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

 

 

55

 

 

ns

 

tSCE

 

 

1 LOW and CE2 HIGH to Write End

40

 

 

ns

 

CE

 

 

 

tAW

 

Address Setup to Write End

40

 

 

ns

 

tHA

 

Address Hold from Write End

0

 

 

ns

 

tSA

 

Address Setup to Write Start

0

 

 

ns

 

tPWE

 

 

 

 

Pulse Width

 

 

40

 

 

ns

 

WE

 

 

 

 

 

tBW

 

 

 

 

 

 

 

 

 

 

 

 

45

 

 

ns

 

BLE/BHE LOW to Write End

 

 

 

tSD

 

Data Setup to Write End

25

 

 

ns

 

tHD

 

Data Hold from Write End

0

 

 

ns

 

t

 

 

 

 

LOW to High- [11, 12]

 

 

20

ns

 

WE

 

 

HZWE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tLZWE

 

 

 

 

HIGH to Low-Z[11]

10

 

 

ns

 

WE

 

 

 

Notes

10.Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 4.

11.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

12.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.

13.The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.

Document #: 38-05326 Rev. *C

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Cypress CY62167DV18 manual Switching Characteristics Over the Operating Range, Write Cycle

CY62167DV18 specifications

The Cypress CY62167DV18 is a high-performance, low-power static RAM (SRAM) device designed for a variety of applications where speed and efficiency are critical. This memory chip is especially notable for its compact footprint and advanced features, making it ideal for use in portable electronics, consumer products, telecommunications, and networking equipment.

One of the main features of the CY62167DV18 is its access time of 10 nanoseconds, allowing for rapid data retrieval and processing. With a data width of 16 bits, the device provides significant data bandwidth, which is essential for modern applications requiring fast processing capabilities. It operates on a power supply voltage of 1.8V, thereby ensuring low power consumption, which is a crucial factor in battery-operated devices.

The CY62167DV18 employs Cypress’s advanced SRAM technology, which improves speed while reducing latency. This SRAM is fabricated using a highly reliable process technology that enhances durability and performance. Additionally, the chip's static nature eliminates the need for refresh cycles, contributing to quick access times and more straightforward system designs compared to dynamic RAM (DRAM).

Another characteristic of the CY62167DV18 is its compatibility with various memory bus standards, including the popular 32-bit asynchronous interface. This adaptability allows the chip to easily integrate into existing designs without requiring major modifications. Furthermore, the device supports a wide temperature range, making it suitable for both consumer and industrial applications.

The CY62167DV18 comes with built-in features such as a chip enable input (CE), write enable input (WE), and output enable input (OE). These functionalities streamline control and management of memory access, enabling engineers to design efficient and reliable systems. The chip is available in a compact 48-ball BGA (Ball Grid Array) package, which saves space on printed circuit boards and enhances thermal performance.

In summary, the Cypress CY62167DV18 is a robust, high-speed SRAM solution that combines advanced technology with low power consumption. Its impressive access times, low-voltage operation, compatibility with multiple standards, and compact design make it a versatile choice for a broad range of applications, from consumer electronics to sophisticated industrial systems. As the demand for faster and more efficient memory solutions continues to grow, the CY62167DV18 stands out as a reliable option for developers seeking to enhance their product performance.