CY62167DV18 MoBL®
Document #: 38-05326 Rev. *C Page 5 of 11
Switching Characteristics (Over the Operating Range)[10]
Parameter Description 55 ns Unit
Min Max
Read Cycle
tRC Read Cycle Time 55 ns
tAA Address to Data Valid 55 ns
tOHA Data Hold from Address Change 10 ns
tACE CE1 LOW and CE2 HIGH to Data Valid 55 ns
tDOE OE LOW to Data Valid 25 ns
tLZOE OE LOW to LOW Z[11] 5ns
tHZOE OE HIGH to High Z[11, 12] 20 ns
tLZCE CE1 LOW and CE2 HIGH to Low Z[11] 10 ns
tHZCE CE1 HIGH and CE2 LOW to High Z[11, 12] 20 ns
tPU CE1 LOW and CE2 HIGH to Power up 0 ns
tPD CE1 HIGH and CE2 LOW to Power down 55 ns
tDBE BLE/BHE LOW to Data Valid 55 ns
tLZBE BLE/BHE LOW to Low Z[11] 5ns
tHZBE BLE/BHE HIGH to HIGH Z[11, 12] 20 ns
Write Cycle[13]
tWC Write Cycle Time 55 ns
tSCE CE1 LOW and CE2 HIGH to Write End 40 ns
tAW Address Setup to Write End 40 ns
tHA Address Hold from Write End 0 ns
tSA Address Setup to Write Start 0 ns
tPWE WE Pulse Width 40 ns
tBW BLE/BHE LOW to Write End 45 ns
tSD Data Setup to Write End 25 ns
tHD Data Hold from Write End 0 ns
tHZWE WE LOW to High- [11, 12] 20 ns
tLZWE WE HIGH to Low-Z[11] 10 ns
Notes
10.Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of VCC(typ)/2, input pulse levels
of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page4.
11.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any
given device.
12.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.
13.The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate
a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
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