Cypress CY62167EV30 Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance

CY62167EV30 MoBL®

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature	–65°C to + 150°C
Ambient Temperature with
Power Applied	–55°C to + 125°C
Supply Voltage to Ground
Potential	–0.3V to 3.9V VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High Z State[6, 7]	–0.3V to 3.9V VCC(max) + 0.3V

DC Input Voltage[6, 7]		...........–0.3V to 3.9V (VCC(max) + 0.3V
Output Current into Outputs (LOW)				20 mA
Static Discharge Voltage				>2001V
(MIL-STD-883, Method 3015)
Latch up Current				>200 mA
Operating Range
Device		Range	Ambient	[8]
			Temperature	VCC
CY62167EV30LL	Industrial/		–40°C to +85°C	2.2V to 3.6V
		Auto-A

Electrical Characteristics

Over the Operating Range

Parameter	Description				Test Conditions		45 ns (Industrial/Auto-A)			Unit
							Min	Typ[5]	Max
VOH	Output HIGH Voltage		2.2 < VCC < 2.7			IOH = –0.1 mA	2.0			V
			2.7 < VCC < 3.6			IOH = –1.0 mA	2.4			V
VOL	Output LOW Voltage	2.2 < VCC < 2.7				IOL = 0.1 mA			0.4	V
			2.7 < VCC < 3.6			IOL = 2.1mA			0.4	V
VIH	Input HIGH Voltage	2.2 < VCC < 2.7					1.8		VCC + 0.3V	V
			2.7 < VCC < 3.6				2.2		VCC + 0.3V	V
VIL	Input LOW Voltage	2.2 < VCC < 2.7					–0.3		0.6	V
			2.7 < VCC < 3.6			For VFBGA package	–0.3		0.8	V
						For TSOP I package	–0.3		0.7[9]	V
IIX	Input Leakage Current	GND < VI < VCC					–1		+1	μA
IOZ	Output Leakage Current	GND < VO < VCC, Output Disabled					–1		+1	μA
ICC	VCC Operating Supply		f = fMAX = 1/tRC			VCC = VCC(max)		25	30	mA
	Current					IOUT = 0 mA
			f = 1 MHz					2.2	4.0	mA
						CMOS levels
ISB1	Automatic CE Power Down			1 > VCC − 0.2V or CE2 < 0.2V				1.5	12	μA
			CE
	Current—CMOS Inputs		VIN > VCC − 0.2V, VIN < 0.2V,
			f = fMAX (Address and Data Only),
			f = 0 (OE, WE, BHE and BLE), VCC = 3.60V
ISB2[10]	Automatic CE Power Down			1 > VCC − 0.2V or CE2 < 0.2V,				1.5	12	μA
			CE
	Current—CMOS Inputs		VIN > VCC − 0.2V or VIN < 0.2V,
			f = 0, VCC = 3.60V

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter	Description	Test Conditions	Max	Unit
CIN	Input Capacitance	TA = 25°C, f = 1 MHz,	10	pF
		VCC = VCC(typ)
COUT	Output Capacitance		10	pF

Notes

6.VIL(min) = –2.0V for pulse durations less than 20 ns.

7.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

8.Full Device AC operation assumes a 100 μs ramp time from 0 to VCC (min) and 200 μs wait time after VCC stabilization.

9.Under DC conditions the device meets a VIL of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V. This is applicable to TSOP I package only.

10.Only chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating

Document #: 38-05446 Rev. *E Page 3 of 14

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