CY62167EV30 MoBL®
Document #: 38-05446 Rev. *E Page 3 of 14
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential.................................–0.3V to 3.9V VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High Z State[6, 7]..................–0.3V to 3.9V VCC(max) + 0.3V
DC Input Voltage[6, 7]...........–0.3V to 3.9V (VCC(max) + 0.3V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch up Current......................................................>200 mA
Operating Range
Device Range Ambient
Temperature VCC[8]
CY62167EV30LL Industrial/
Auto-A –40°C to +85°C 2.2V to 3.6V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions 45 ns (Industrial/Auto-A) Unit
Min Typ[5] Max
VOH Output HIGH Voltage 2.2 < VCC < 2.7 IOH = –0.1 mA 2.0 V
2.7 < VCC < 3.6 IOH = –1.0 mA 2.4 V
VOL Output LOW Voltage 2.2 < VCC < 2.7 IOL = 0.1 mA 0.4 V
2.7 < VCC < 3.6 IOL = 2.1mA 0.4 V
VIH Input HIGH Voltage 2.2 < VCC < 2.7 1.8 VCC + 0.3V V
2.7 < VCC < 3.6 2.2 VCC + 0.3V V
VIL Input LOW Voltage 2.2 < VCC < 2.7 –0.3 0.6 V
2.7 < VCC < 3.6 For VFBGA package –0.3 0.8 V
For TSOP I package –0.3 0.7[9] V
IIX Input Leakage Current GND < VI < VCC –1 +1 μA
IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 μA
ICC VCC Operating Supply
Current
f = fMAX = 1/tRC VCC = VCC(max)
IOUT = 0 mA
CMOS levels
25 30 mA
f = 1 MHz 2.2 4.0 mA
ISB1 Automatic CE Power Down
Current—CMOS Inputs CE1 > VCC − 0.2V or CE2 < 0.2V
VIN > VCC − 0.2V, VIN < 0.2V,
f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE and BLE), VCC=3.60V
1.5 12 μA
ISB2[10] Automatic CE Power Down
Current—CMOS Inputs CE1 > VCC − 0.2V or CE2 < 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
1.5 12 μA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10 pF
COUT Output Capacitance 10 pF
Notes
6. VIL(min) = –2.0V for pulse durations less than 20 ns.
7. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full Device AC operation assumes a 100 μs ramp time from 0 to VCC (min) and 200 μs wait time after VCC stabilization.
9. Under DC conditions the device meets a VIL of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V. This is
applicable to TSOP I package only.
10.Only chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating
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