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CY62256
Document #: 38-05248 Rev. *B Page 3 of 11
ISB2 Automatic CE
Power-down Current—
CMOS Inputs
Max. VCC, CE > VCC − 0.3V
VIN > VCC − 0.3V, or VIN <
0.3V, f = 0
15 1 5 mA
L250250 µA
LL 0.1 5 0.1 5µA
Indust’l Temp Range LL 0.1 10 0.1 10 µA
Capacitance[4]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = 5.0V 6pF
COUT Output Capacitance 8pF
Electrical Characteristics Over the Operating Range (continued)
Parameter Description Test Conditions
CY62256−55 CY62256−70
UnitMin. Typ.[3] Max. Min. Typ.[3] Max.
AC Test Loads and WaveformsData Retention CharacteristicsParameter Description Conditions[5] Min. Typ.[3] Max. Unit
VDR VCC for Data Retention 2.0 V
ICCDR Data Retention Current L VCC = 3.0V, CE > VCC − 0.3V,
VIN > VCC − 0.3V, or VIN < 0.3V 250 µA
LL 0.1 5µA
LL Ind’l0.1 10 µA
tCDR[4] Chip Deselect to Data Retention Time 0ns
tR[4] Operation Recovery Time tRC ns
Data Retention WaveformNotes:
4. Tested initially and after any design or process changes that may affect these parameters.
5. No input may exceed VCC + 0.5V.
3.0V
5V
OUTPUT
R1 1800Ω
R2
990Ω
100pF
INCLUDING
JIG AND
SCOPE
GND
90%
10% 90%
10%
<5ns <5ns
5V
OUTPUT
R1 1800Ω
R2
990Ω
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT 1.77V
Equivalent to: THÉ VENIN EQUIVALENT
ALL INPUT PULSES
639Ω
3.0V3.0V
tCDR
VDR>2V
DATA RETENTION MODE
tR
CE
VCC