CY62256
Document #: 38-05248 Rev. *B Page 4 of 11
Switching Characteristics Over the Operating Range[6]
Parameter Description
CY6225655 CY6225670
UnitMin. Max. Min. Max.
Read Cycle
tRC Read Cycle Time 55 70 ns
tAA Address to Data Valid 55 70 ns
tOHA Data Hold from Address Change 5 5ns
tACE CE LOW to Data Valid 55 70 ns
tDOE OE LOW to Data Valid 25 35 ns
tLZOE OE LOW to Low-Z[7] 5 5 ns
tHZOE OE HIGH to High-Z[7, 8] 20 25 ns
tLZCE CE LOW to Low-Z[7] 5 5 ns
tHZCE CE HIGH to High-Z[7, 8] 20 25 ns
tPU CE LOW to Power-up 0 0ns
tPD CE HIGH to Power-down 55 70 ns
Write Cycle[9, 10]
tWC Write Cycle Time 55 70 ns
tSCE CE LOW to Write End 45 60 ns
tAW Address Set-up to Write End 45 60 ns
tHA Address Hold from Write End 0 0ns
tSA Address Set-up to Write Start 0 0ns
tPWE WE Pulse Width 40 50 ns
tSD Data Set-up to Write End 25 30 ns
tHD Data Hold from Write End 0 0ns
tHZWE WE LOW to High-Z[7, 8] 20 25 ns
tLZWE WE HIGH to Low-Z[7] 5 5 ns
Switching Waveforms
Notes:
6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 100-pF load capacitance.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device .
8. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in (b) of AC T est Loads . T rans ition is me asured ±500 mV from steady-state voltage.
9. The internal Write time of the memory is def ined by the ov erla p of C E LOW and WE LOW. Both signals must be LOW to initiate a Wr ite and either signa l can terminate
a Write by going HIGH. The data input set-up and hold timing s hould be referen ced to the r ising edge of th e si gnal that termi nates the Write.
10. The minimum Write cycle time for Write cycle #3 (WE controlled, OE LOW) is th e sum of tHZWE and tSD
11. Device is continuously selected. OE, CE = VIL.
12. WE is HIGH for Read cycle.
ADDRESS
DATA OUT PREVIOUS DATA VALID DATA VALID
tRC
tAA
tOHA
Read Cycle No. 1
[11, 12]