Ads, Cnten, Port to Port Delays | Cypress CY7C09099V, CY7C09179V

CY7C09079V/89V/99V

CY7C09179V/89V/99V

Switching Characteristics Over the Operating Range

								CY7C09079V/89V/99V
Parameter					Description			CY7C09179V/89V/99V
Parameter					Description	-6[1]		-7[1]			-9			-12
						Min	Max	Min	Max	Min		Max	Min		Max	Unit
fMAX1	fMax Flow-Through						53		45			40			33	MHz
fMAX2	fMax Pipelined						100		83			67			50	MHz
tCYC1	Clock Cycle Time - Flow-Through					19		22		25			30			ns
tCYC2	Clock Cycle Time - Pipelined					10		12		15			20			ns
tCH1	Clock HIGH Time - Flow-Through					6.5		7.5		12			12			ns
tCL1	Clock LOW Time - Flow-Through					6.5		7.5		12			12			ns
tCH2	Clock HIGH Time - Pipelined					4		5		6			8			ns
tCL2	Clock LOW Time - Pipelined					4		5		6			8			ns
tR	Clock Rise Time						3		3			3			3	ns
tF	Clock Fall Time						3		3			3			3	ns
tSA	Address Set-Up Time					3.5		4		4			4			ns
tHA	Address Hold Time					0		0		1			1			ns
tSC	Chip Enable Set-Up Time					3.5		4		4			4			ns
tHC	Chip Enable Hold Time					0		0		1			1			ns
tSW
tSW	R/W		Set-Up Time			3.5		4		4			4			ns
tHW
tHW	R/W		Hold Time			0		0		1			1			ns
tSD	Input Data Set-Up Time					3.5		4		4			4			ns
tHD	Input Data Hold Time					0		0		1			1			ns
tSAD			Set-Up Time			3.5		4		4			4			ns
tSAD	ADS		Set-Up Time			3.5		4		4			4			ns
tHAD			Hold Time			0		0		1			1			ns
tHAD	ADS		Hold Time			0		0		1			1			ns
tSCN				Set-Up Time		3.5		4.5		5			5			ns
tSCN	CNTEN			Set-Up Time		3.5		4.5		5			5			ns
tHCN				Hold Time		0		0		1			1			ns
tHCN	CNTEN			Hold Time		0		0		1			1			ns
tSRST					Set-Up Time	3.5		4		4			4			ns
tSRST	CNTRST				Set-Up Time	3.5		4		4			4			ns
tHRST					Hold Time	0		0		1			1			ns
tHRST	CNTRST				Hold Time	0		0		1			1			ns
tOE	Output Enable to Data Valid						8		9			10			12	ns
tOLZ[14, 15]		to Low Z				2		2		2			2			ns
tOLZ[14, 15]	OE	to Low Z				2		2		2			2			ns
tOHZ[14, 15]		to High Z				1	7	1	7	1		7	1		7	ns
tOHZ[14, 15]	OE	to High Z				1	7	1	7	1		7	1		7	ns
tCD1	Clock to Data Valid - Flow-Through						15		18			20			25	ns
tCD2	Clock to Data Valid - Pipelined						6.5		7.5			9			12	ns
tDC	Data Output Hold After Clock HIGH					2		2		2			2			ns
tCKHZ[14, 15]	Clock HIGH to Output High Z					2	9	2	9	2		9	2		9	ns
tCKLZ[14, 15]	Clock HIGH to Output Low Z					2		2		2			2			ns
Port to Port Delays

tCWDD	Write Port Clock HIGH to Read Data Delay						30		35			40			40	ns
tCCS	Clock to Clock Set-Up Time						9		10			15			15	ns

Notes

14.Test conditions used are Load 2.

15.This parameter is guaranteed by design, but it is not production tested.

Document #: 38-06043 Rev. *C

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CY7C09089V, CY7C09189V, CY7C09179V, CY7C09079V, CY7C09199V specifications

Cypress Semiconductor has developed a series of high-performance static random-access memory (SRAM) chips, including the CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V. These SRAM products are designed for a wide array of applications, ranging from telecommunications and networking to consumer electronics, due to their high speed, low latency, and reliable performance.

One of the most notable features of these CY7C series devices is their high-density configuration. These chips generally offer densities ranging from 256Kb to 16Mb, making them suitable for various applications requiring significant memory capacity without sacrificing speed. Additionally, they typically incorporate a low-power architecture, allowing for efficient energy consumption, which is crucial in battery-operated devices.

The CY7C09099V and CY7C09199V variants are particularly noted for their high-speed access times, achieving data rate performance levels that meet the stringent requirements of modern computing tasks. The read and write access times can vary from 10ns to 15ns, ensuring that these devices can handle fast data processing demands. Their robust performance is complemented by features such as a single supply voltage that simplifies circuit design while providing ease of integration into various systems.

One of the advanced technologies used in these SRAM devices is the asynchronous read and write operation. This technology allows the memory to provide quick data retrieval and storage without the need for complex timing sequences, enhancing overall system responsiveness. Moreover, the chips feature a common data input/output interface, which simplifies communication protocols and reduces design complexity.

Another essential characteristic of the CY7C series is their wide operating temperature range, making them suitable for industrial applications. The ability to operate in diverse environmental conditions increases their reliability across different sectors. Embedded parity checking within the memory architecture helps to detect and correct errors, further ensuring data integrity.

Overall, Cypress’s CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V SRAM devices represent a significant advancement in memory technology. With a blend of high-speed performance, low power consumption, and robust reliability, they are designed to meet the evolving needs of modern electronic applications, providing designers with a reliable solution for high-performance memory requirements.

Cypress CY7C09099V, CY7C09179V Switching Characteristics Over the Operating Range, Ads, Cnten

Models: CY7C09089V CY7C09189V CY7C09179V CY7C09079V CY7C09199V CY7C09099V

Switching Characteristics Over the Operating Range

CY7C09179V/89V/99V

ADS

CNTEN

Port to Port Delays

Clock to Clock Set-Up Time

CY7C09089V, CY7C09189V, CY7C09179V, CY7C09079V, CY7C09199V specifications