CY7C09079V/89V/99V

CY7C09179V/89V/99V

Selection Guide

Description

CY7C09079V/89V/99V

CY7C09079V/89V/99V

CY7C09079V/89V/99V

CY7C09079V/89V/99V

CY7C09179V/89V/99V-6[1]

CY7C09179V/89V/99V-7[1]

CY7C09179V/89V/99V

CY7C09179V/89V/99V

 

 

 

-9

-12

fMAX2 (MHz)

100

83

67

50

(Pipelined)

 

 

 

 

 

 

 

 

 

Max. Access Time

6.5

7.5

9

12

(ns) (Clock to Data,

 

 

 

 

Pipelined)

 

 

 

 

 

 

 

 

 

Typical Operating

175

155

135

115

Current ICC (mA)

 

 

 

 

Typical Standby

25

25

20

20

Current for ISB1

 

 

 

 

(mA) (Both Ports

 

 

 

 

TTL Level)

 

 

 

 

 

 

 

 

 

Typical Standby

10 μA

10 μA

10 μA

10 μA

Current for ISB3

 

 

 

 

(μA) (Both Ports

 

 

 

 

CMOS Level)

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

Left Port

 

Right Port

Description

 

A0L–A16L

 

A0R–A16R

Address Inputs (A0–A14for 32K; A0–A15for 64K; and A0–A16for 128K devices).

 

ADSL

 

ADSR

Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW to

 

 

 

 

 

 

 

 

 

 

 

 

 

 

access the part using an externally supplied address. Asserting this signal LOW also loads

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the burst counter with the address present on the address pins.

 

 

 

 

0L,CE1L

 

 

 

 

0R,CE1R

Chip Enable Input. To select either the left or right port, both

 

0 AND CE1 must be asserted

 

CE

CE

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

to their active states (CE0 VIL and CE1 VIH).

 

CLKL

 

CLKR

Clock Signal. This input can be free running or strobed. Maximum clock input rate is fMAX.

 

CNTENL

 

CNTENR

Counter Enable Input. Asserting this signal LOW increments the burst address counter of its

 

 

 

 

 

 

 

 

 

 

 

 

 

 

respective port on each rising edge of CLK. CNTEN is disabled if ADS or CNTRST are

 

 

 

 

 

 

 

 

 

 

 

 

 

 

asserted LOW.

 

CNTRSTL

 

CNTRSTR

Counter Reset Input. Asserting this signal LOW resets the burst address counter of its

 

 

 

 

 

 

 

 

 

 

 

 

 

 

respective port to zero. CNTRST is not disabled by asserting ADS or CNTEN.

 

I/O0L–I/O8L

 

I/O0R–I/O8R

Data Bus Input/Output (I/O0–I/O7for x8 devices; I/O0–I/O8for x9 devices).

 

 

 

 

 

L

 

 

 

 

 

R

Output Enable Input. This signal must be asserted LOW to enable the I/O data pins during

 

OE

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

read operations.

 

 

 

 

 

 

L

 

 

 

 

 

 

R

Read/Write Enable Input. This signal is asserted LOW to write to the dual port memory array.

 

R/W

R/W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

For read operations, assert this pin HIGH.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flow-Through/Pipelined Select Input. For flow-through mode operation, assert this pin LOW.

 

FT/PIPEL

 

 

 

 

FT/PIPER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

For pipelined mode operation, assert this pin HIGH.

 

GND

 

 

 

 

 

 

Ground Input.

 

 

 

 

 

 

 

 

 

 

NC

 

 

 

 

 

 

No Connect.

 

 

 

 

 

 

 

 

 

 

VCC

 

 

 

 

 

 

Power Input.

Notes

8.This pin is NC for CY7C09179V.

9.This pin is NC for CY7C09179V and CY7C09189V

Document #: 38-06043 Rev. *C

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Cypress CY7C09099V, CY7C09199V Selection Guide, Pin Definitions, Description CY7C09079V/89V/99V, CY7C09179V/89V/99V

CY7C09089V, CY7C09189V, CY7C09179V, CY7C09079V, CY7C09199V specifications

Cypress Semiconductor has developed a series of high-performance static random-access memory (SRAM) chips, including the CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V. These SRAM products are designed for a wide array of applications, ranging from telecommunications and networking to consumer electronics, due to their high speed, low latency, and reliable performance.

One of the most notable features of these CY7C series devices is their high-density configuration. These chips generally offer densities ranging from 256Kb to 16Mb, making them suitable for various applications requiring significant memory capacity without sacrificing speed. Additionally, they typically incorporate a low-power architecture, allowing for efficient energy consumption, which is crucial in battery-operated devices.

The CY7C09099V and CY7C09199V variants are particularly noted for their high-speed access times, achieving data rate performance levels that meet the stringent requirements of modern computing tasks. The read and write access times can vary from 10ns to 15ns, ensuring that these devices can handle fast data processing demands. Their robust performance is complemented by features such as a single supply voltage that simplifies circuit design while providing ease of integration into various systems.

One of the advanced technologies used in these SRAM devices is the asynchronous read and write operation. This technology allows the memory to provide quick data retrieval and storage without the need for complex timing sequences, enhancing overall system responsiveness. Moreover, the chips feature a common data input/output interface, which simplifies communication protocols and reduces design complexity.

Another essential characteristic of the CY7C series is their wide operating temperature range, making them suitable for industrial applications. The ability to operate in diverse environmental conditions increases their reliability across different sectors. Embedded parity checking within the memory architecture helps to detect and correct errors, further ensuring data integrity.

Overall, Cypress’s CY7C09099V, CY7C09199V, CY7C09079V, CY7C09179V, and CY7C09189V SRAM devices represent a significant advancement in memory technology. With a blend of high-speed performance, low power consumption, and robust reliability, they are designed to meet the evolving needs of modern electronic applications, providing designers with a reliable solution for high-performance memory requirements.