Cypress CY7C1346H manual Maximum Ratings, Operating Range

CY7C1346H

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature		–65°C to +150°C
Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		–0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND		–0.5V to +VDD
DC Voltage Applied to Outputs
in Tri-State	–0.5V to VDDQ + 0.5V

Electrical Characteristics Over the Operating Range [8, 9]

DC Input Voltage	–0.5V to VDD + 0.5V
Current into Outputs (LOW)	20 mA
Static Discharge Voltage	>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current	>200 mA

Operating Range

	Ambient
Range	Temperature	VDD	VDDQ
Commercial	0°C to +70°C	3.3V –5%/+10%	2.5V –5%
			to VDD
Industrial	-40°C to +85°C

Parameter	Description	Test Conditions	Min.	Max.	Unit
VDD	Power Supply Voltage		3.135	3.6	V
VDDQ	I/O Supply Voltage	for 3.3V I/O	3.135	VDD	V
		for 2.5V I/O	2.375	2.625
VOH	Output HIGH Voltage	for 3.3V I/O, IOH = –4.0 mA	2.4		V
		for 2.5V I/O, IOH = –1.0 mA	2.0
VOL	Output LOW Voltage	for 3.3V I/O, IOL = 8.0 mA		0.4	V
		for 2.5V I/O, IOL = 1.0 mA		0.4
VIH	Input HIGH Voltage[8]	for 3.3V I/O	2.0	VDD + 0.3V	V
		for 2.5V I/O	1.7	VDD + 0.3V	V
VIL	Input LOW Voltage[8]	for 3.3V I/O	–0.3	0.8	V
		for 2.5V I/O	–0.3	0.7	V
IX	Input Leakage Current	GND ≤ VI ≤ VDDQ	–5	5	∝A
	except ZZ and MODE
	Input Current of MODE	Input = VSS	–30		∝A
		Input = VDD		5	∝A
	Input Current of ZZ	Input = VSS	–5		∝A
		Input = VDD		30	∝A
IOZ	Output Leakage Current	GND ≤ VI ≤ VDDQ, Output Disabled	–5	5	∝A
IDD	VDD Operating Supply Current	VDD = Max., IOUT = 0 mA,		240	mA
		f = fMAX = 1/tCYC
ISB1	Automatic CS Power-down	VDD = Max, Device Deselected, VIN ≥ VIH or		100	mA
	Current—TTL Inputs	VIN ≤ VIL, f = fMAX = 1/tCYC
ISB2	Automatic CS Power-down	VDD = Max, Device Deselected, VIN ≤ 0.3V or		40	mA
	Current—CMOS Inputs	VIN > VDDQ – 0.3V, f = 0
ISB3	Automatic CS Power-down	VDD = Max, Device Deselected, or VIN ≤ 0.3V		85	mA
	Current—CMOS Inputs	or VIN > VDDQ – 0.3V, f = fMAX = 1/tCYC
ISB4	Automatic CS Power-down	VDD = Max, Device Deselected, VIN ≥ VIH or		45	mA
	Current—TTL Inputs	VIN ≤ VIL, f = 0

Notes:

8.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

9.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05672 Rev. *B Page 8 of 16

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