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Cypress Logic Block Diagram-CY7C1356CV25 512K x, Selection Guide, MHz 200 MHz 166 MHz Unit

Models: CY7C1356CV25 CY7C1354CV25

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CY7C1354CV25

CY7C1356CV25

Logic Block Diagram–CY7C1356CV25 (512K x 18)

	A0, A1, A	ADDRESS
		REGISTER 0		A1	D1	Q1 A1'
				A1	D1	Q1 A1'
	MODE			A0	D0 BURST Q0 A0'
	MODE			ADV/LD		LOGIC
CLK	C			ADV/LD
CLK	C			C
CEN				C
CEN
		WRITE ADDRESS		WRITE ADDRESS
		REGISTER 1		REGISTER 2
									O		O
									U		U
									T		T
	ADV/LD							S	P	D	P
	ADV/LD							E	U	A	U
				WRITE REGISTRY				N	T	T	T
				WRITE REGISTRY			MEMORY	S	R	A	B
	BWa			AND DATA COHERENCY		WRITE	MEMORY	E	R		B
	BWa			AND DATA COHERENCY		WRITE	ARRAY		E	S	U
				CONTROL LOGIC		DRIVERS	ARRAY	A	G	S	U
				CONTROL LOGIC		DRIVERS		A	G	T	F
	BWb							M	I	E	F
								P	S	E	E
								S	T	R	R
									E	I	S
	WE								R	N
	WE								S	N
										G
									E		E
							INPUT	E		INPUT	E
							REGISTER 1	E		REGISTER 0	E
	OE		READ LOGIC
	CE1		READ LOGIC
	CE1
	CE2
	CE3
	ZZ		Sleep
			Control

DQs DQPa DQPb

Selection Guide

	250 MHz	200 MHz	166 MHz	Unit
Maximum Access Time	2.8	3.2	3.5	ns

Maximum Operating Current	250	220	180	mA

Maximum CMOS Standby Current	40	40	40	mA

Document #: 38-05537 Rev. *H

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Cypress CY7C1354CV25 manual Logic Block Diagram-CY7C1356CV25 512K x, Selection Guide, MHz 200 MHz 166 MHz Unit

CY7C1356CV25, CY7C1354CV25 specifications

The Cypress CY7C1354CV25 and CY7C1356CV25 are high-performance, synchronous SRAM (Static Random Access Memory) devices designed for bandwidth-intensive applications. Both components are part of the Cypress family of low-power high-speed SRAMs, making them ideal for use in networking, telecommunications, and high-speed data processing systems.

One of the main features of the CY7C1354CV25 and CY7C1356CV25 is their wide data bus. The CY7C1354CV25 provides a 4 Megabit memory capacity with a 36-bit wide data interface, while the CY7C1356CV25 boosts this to 6 Megabits with a similarly wide data interface. This allows for high data throughput and efficiency in applications where quick access to large data sets is critical.

Both devices offer asynchronous write and synchronous read capabilities, enabling them to support pipelines and burst accesses effectively. The memory can be accessed in a single cycle, which considerably enhances performance in applications that require quick response times, such as high-speed packet processing in routers and switches.

The Cypress SRAMs are built using advanced CMOS technology, enabling low power consumption, which is essential for mobile and battery-operated devices. Their operating voltage range, typically between 2.7V and 3.6V, contributes to the low power profile while providing a high level of performance.

Moreover, both devices support a wide temperature range, making them suitable for industrial applications. They can operate in environments from -40°C to +125°C, ensuring reliability and performance under varying conditions. This makes the CY7C1354CV25 and CY7C1356CV25 particularly valuable for automotive and aerospace applications where temperature extremes can be encountered.

Cypress has enhanced the reliability of these SRAMs with features such as built-in error detection and correction capabilities. This ensures data integrity, which is crucial for mission-critical applications.

In summary, the Cypress CY7C1354CV25 and CY7C1356CV25 ensure tight integration of high capacity, speed, and reliability. With their advanced synchronous architecture, low power consumption, and broad temperature range, they represent an excellent choice for applications that demand high performance in challenging environments. These SRAM devices continue to meet the needs of modern electronic designs, making them a trusted solution in the industry.

Contents

Functional Description1 FeaturesLogic Block Diagram-CY7C1354CV25 256K x Cypress Semiconductor Corporation Selection Guide Logic Block Diagram-CY7C1356CV25 512K xMaximum Access Time Maximum Operating Current 250 MHz 200 MHz 166 MHz Unit Pin Configurations Pin Tqfp Pinout CY7C1354CV25 256K × Pin Configurations Ball BGA Pinout CY7C1354CV25 256K × Pin Configurations Ball Fbga Pinout Pin Definitions Single Write Accesses Single Read AccessesBurst Read Accesses Functional Overview ZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Function CY7C1354CV25 BW d BW c BW b BW a Sleep ModePartial Write Cycle Description2, 3, 4 Function CY7C1356CV25 BW b BW a Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller Block DiagramTAP Controller State Diagram10 Bypass Register TAP Instruction Set Output Times TAP TimingParameter Description Min Max Unit Clock Set-up Times Identification Register Definitions 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Scan Register Sizes Boundary Scan Exit Order 256K × Bit # Ball ID J10 Boundary Scan Exit Order 512K ×B10 K10 Operating Range Electrical Characteristics Over the Operating Range14Maximum Ratings Range AC Test Loads and Waveforms Capacitance16Thermal Resistance16 Package Switching Characteristics Over the Operating Range 18 250 200 166 Parameter Description Unit Min Max ADV/LD BWX Switching WaveformsRead/Write Timing23, 24 DON’T Care Undefined CLK CEN ADV/LD BWX NOP, Stall and Deselect CYCLES23, 24 ZZ Mode Timing27 DON’T Care Ordering Information CY7C1356CV25-166BZXI Document # 38-05537 Rev. *H CY7C1356CV25-200BZXI Document # 38-05537 Rev. *H CY7C1356CV25-250BZXI Document # 38-05537 Rev. *H Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Ball BGA 14 x 22 x 2.4 mm 90±0.05 Ball Fbga 13 x 15 x 1.4 mm ECN No Issue Date Orig. Description of Change Document History

Logic Block Diagram–CY7C1356CV25 (512K x 18)

ADV/LD

Selection Guide

250 MHz

200 MHz

166 MHz

Unit

Maximum Access Time

Maximum Operating Current

Maximum CMOS Standby Current

Document #: 38-05537 Rev. *H

CY7C1356CV25, CY7C1354CV25 specifications