Maximum Ratings, Operating Range | Cypress CY7C1356CV25 instruction

CY7C1354CV25

CY7C1356CV25

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature		–65°C to +150°C
Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		–0.5V to +3.6V
Supply Voltage on VDDQ Relative to GND		–0.5V to +VDD
DC to Outputs in Tri-State	–0.5V to VDDQ + 0.5V
DC Input Voltage	–0.5V to VDD + 0.5V

Current into Outputs (LOW)	20 mA
Static Discharge Voltage	> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current	> 200 mA

Operating Range

Range	Ambient Temperature	VDD/VDDQ
Commercial	0°C to +70°C	2.5V ±5%
Industrial	–40°C to +85°C

Electrical Characteristics Over the Operating Range[14, 15]

Parameter	Description	Test Conditions		Min.	Max.	Unit
VDD	Power Supply Voltage			2.375	2.625	V
VDDQ	I/O Supply Voltage	for 2.5V I/O		2.375	VDD	V
VOH	Output HIGH Voltage	for 2.5V I/O, IOH = −1.0 mA		2.0		V
VOL	Output LOW Voltage	for 2.5V I/O, IOL= 1.0 mA			0.4	V
VIH	Input HIGH Voltage	for 2.5V I/O		1.7	VDD + 0.3V	V
VIL	Input LOW Voltage[14]	for 2.5V I/O		–0.3	0.7	V
IX	Input Leakage Current	GND ≤ VI ≤ VDDQ		–5	5	∝A
	except ZZ and MODE
	Input Current of MODE	Input = VSS		–30		∝A
		Input = VDD			5	∝A
	Input Current of ZZ	Input = VSS		–5		∝A
		Input = VDD			30	∝A
IOZ	Output Leakage Current	GND ≤ VI ≤ VDDQ, Output Disabled		–5	5	∝A
IDD	VDD Operating Supply	VDD = Max., IOUT = 0 mA,	4-ns cycle, 250 MHz		250	mA
		f = fMAX = 1/tCYC
		f = fMAX = 1/tCYC	5-ns cycle, 200 MHz		220	mA
			6-ns cycle, 166 MHz		180	mA

ISB1	Automatic CE	Max. VDD, Device Deselected,	4-ns cycle, 250 MHz		130	mA
	Power-down	VIN ≥ VIH or VIN ≤ VIL, f = fMAX =
	Power-down	VIN ≥ VIH or VIN ≤ VIL, f = fMAX =	5-ns cycle, 200 MHz		120	mA
	Current—TTL Inputs	1/tCYC
	Current—TTL Inputs	1/tCYC	6-ns cycle, 166 MHz		110	mA
			6-ns cycle, 166 MHz		110	mA

ISB2	Automatic CE	Max. VDD, Device Deselected,	All speed grades		40	mA
	Power-down	VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
	Current—CMOS Inputs	f = 0
ISB3	Automatic CE	Max. VDD, Device Deselected,	4-ns cycle, 250 MHz		120	mA
	Power-down	VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
	Power-down	VIN ≤ 0.3V or VIN > VDDQ − 0.3V,	5-ns cycle, 200 MHz		110	mA
	Current—CMOS Inputs	f = fMAX = 1/tCYC
	Current—CMOS Inputs	f = fMAX = 1/tCYC	6-ns cycle, 166 MHz		100	mA
			6-ns cycle, 166 MHz		100	mA

ISB4	Automatic CE	Max. VDD, Device Deselected,	All speed grades		40	mA
	Power-down	VIN ≥ VIH or VIN ≤ VIL, f = 0
	Current—TTL Inputs

Notes:

14.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).

15.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05537 Rev. *H

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CY7C1356CV25, CY7C1354CV25 specifications

The Cypress CY7C1354CV25 and CY7C1356CV25 are high-performance, synchronous SRAM (Static Random Access Memory) devices designed for bandwidth-intensive applications. Both components are part of the Cypress family of low-power high-speed SRAMs, making them ideal for use in networking, telecommunications, and high-speed data processing systems.

One of the main features of the CY7C1354CV25 and CY7C1356CV25 is their wide data bus. The CY7C1354CV25 provides a 4 Megabit memory capacity with a 36-bit wide data interface, while the CY7C1356CV25 boosts this to 6 Megabits with a similarly wide data interface. This allows for high data throughput and efficiency in applications where quick access to large data sets is critical.

Both devices offer asynchronous write and synchronous read capabilities, enabling them to support pipelines and burst accesses effectively. The memory can be accessed in a single cycle, which considerably enhances performance in applications that require quick response times, such as high-speed packet processing in routers and switches.

The Cypress SRAMs are built using advanced CMOS technology, enabling low power consumption, which is essential for mobile and battery-operated devices. Their operating voltage range, typically between 2.7V and 3.6V, contributes to the low power profile while providing a high level of performance.

Moreover, both devices support a wide temperature range, making them suitable for industrial applications. They can operate in environments from -40°C to +125°C, ensuring reliability and performance under varying conditions. This makes the CY7C1354CV25 and CY7C1356CV25 particularly valuable for automotive and aerospace applications where temperature extremes can be encountered.

Cypress has enhanced the reliability of these SRAMs with features such as built-in error detection and correction capabilities. This ensures data integrity, which is crucial for mission-critical applications.

In summary, the Cypress CY7C1354CV25 and CY7C1356CV25 ensure tight integration of high capacity, speed, and reliability. With their advanced synchronous architecture, low power consumption, and broad temperature range, they represent an excellent choice for applications that demand high performance in challenging environments. These SRAM devices continue to meet the needs of modern electronic designs, making them a trusted solution in the industry.

Cypress CY7C1356CV25, CY7C1354CV25 manual Maximum Ratings, Operating Range

Models: CY7C1356CV25 CY7C1354CV25

Maximum Ratings

Operating Range

Range

Electrical Characteristics Over the Operating Range[14, 15]

Parameter

CY7C1356CV25, CY7C1354CV25 specifications