CY7C1410AV18, CY7C1425AV18

CY7C1412AV18, CY7C1414AV18

Switching Waveforms

Figure 5. Read/Write/Deselect Sequence [26, 27, 28]

READ

WRITE

READ

WRITE

READ

WRITE

NOP

1

2

3

4

5

6

7

WRITE NOP

89

10

K

tKH

K

RPS

WPS

AA0 tSA

tKL

 

 

 

tCYC

 

 

tKHKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSC

tHC

A2

A3

tSA tHA

A6

D D10

D11

 

D30

 

 

 

tSD

Q

 

 

 

 

 

 

tCLZ

 

tKHCH

tKL

tCO

D50

Q00

D51

tSD tHD

Q01 Q20

tDOH tCQDOH

D61

Q21 Q40

tCQD

Q41

tCHZ

CtKH

tKHCH

tKHKH

 

tCYC

 

 

 

 

 

 

 

 

C

tCCQO

tCQOH

CQ

tCCQO

tCQOH

CQ

CARE

UNDEFINED

Notes

26.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.

27.Outputs are disabled (High-Z) one clock cycle after a NOP.

28.In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.

Document #: 38-05615 Rev. *E

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Cypress CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 manual Switching Waveforms, Write Read, Write NOP

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.