Cypress CY7C1411BV18, CY7C1413BV18, CY7C1426BV18, CY7C1415BV18 manual Functional Overview

CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18

Functional Overview

The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18 and CY7C1415BV18 are synchronous pipelined burst SRAMs with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR-II completely eliminates the need to turn-around the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C1411BV18, four 9-bit data transfers in the case of CY7C1426BV18, four 18-bit data transfers in the case of CY7C1413BV18, and four 36-bit transfers data in the case of CY7C1415BV18 in two clock cycles.

This device operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS then device behaves in QDR-I mode with a read latency of one clock cycle.

Accesses for both ports are initiated on the positive input clock

(K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is refer- enced to the output clocks (C and C or K and K when in single clock mode).

All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C and C or K and K when in single clock mode).

All synchronous control (RPS, WPS, BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K).

CY7C1413BV18 is described in the following sections. The same basic descriptions apply to CY7C1411BV18, CY7C1426BV18, and CY7C1415BV18.

Read Operations

The CY7C1413BV18 is organized internally as four arrays of 512K x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to address inputs are stored in the read address register. Following the next K clock rise, the corre- sponding lowest order 18-bit word of data is driven onto the Q[17:0] using C as the output timing reference. On the subse- quent rising edge of C, the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C or C, or K or K when in single clock mode). To maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every

rising edge of the output clocks (C and C, or K and K when in single clock mode).

When the read port is deselected, the CY7C1413BV18 first completes the pending read transactions. Synchronous internal circuitry automatically tri-states the outputs following the next rising edge of the positive output clock (C). This enables for a transition between devices without the insertion of wait states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K), the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Initiate write access on every other rising edge of the positive input clock (K). Doing so pipelines the data flow such that 18 bits of data transfers into the device on every rising edge of the input clocks (K and K).

When deselected, the write port ignores all inputs after the pending write operations have been completed.

Byte Write Operations

Byte write operations are supported by the CY7C1413BV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation.

Single Clock Mode

The CY7C1411BV18 can be used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clock (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remains the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power on. This function is a strap option and not alterable during device operation.

Concurrent Transactions

The read and write ports on the CY7C1413BV18 operates independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address location. This

Document Number: 001-07037 Rev. *D Page 8 of 30

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