Electrical Specifications
88 Datasheet, Volume 1
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. VIL is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low
value.
3. VIH is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
4. VIH and VOH may experience excursions above VDDQ. However, input signal drivers must comply with the
signal quality specifications.
5. This is the pull-up/pull-down driver resistance.
6. RTERM is the termination on the DIMM and in not controlled by the processor.
7. The minimum and maximum values for these signals are programmable by BIOS to one of the two sets.
8. SM_DRAMPWROK must have a maximum of 15 ns rise or fall time over VDDQ * 0.55 ±200 mV and the edge
must be monotonic.
9. SM_VREF is defined as VDDQ/2
10. Ron tolerance is preliminary and might be subject to change.
RON_UP(CK) DDR3 Clock Buffer pull-
up Resistance 20 26 40 5, 10
RON_DN(CK) DDR3 Clock Buffer pull-
down Resistance 20 26 40 5, 10
RON_UP(CMD) DDR3 Command Buffer
pull-up Resistance 15 20 25 5, 10
RON_DN(CMD) DDR3 Command Buffer
pull-down Resistance 15 20 25 5, 10
RON_UP(CTL) DDR3 Control Buffer
pull-up Resistance 15 20 25 5, 10
RON_DN(CTL) DDR3 Control Buffer
pull-down Resistance 15 20 25 5, 10
ILI
Input Leakage Current
(DQ, CK)
0V
0.2*VDDQ
0.8*VDDQ
VDDQ
——
± 0.75
± 0.55
± 0.9
± 1.4
mA
ILI
Input Leakage Current
(CMD, CTL)
0V
0.2*VDDQ
0.8*VDDQ
VDDQ
——
± 0.85
± 0.65
± 1.10
± 1.65
mA
Table 7-7. D DR3 Signal Group DC Specifications (Sheet 2 of 2)
Symbol Parameter Min Typ Max Units Notes1,7