Philips BGM1012 MMIC wideband amplifier, Philips Semiconductors, Features, Applications, Pinning

Philips Semiconductors	Product specification
MMIC wideband amplifier	BGM1012

FEATURES

∙Internally matched to 50 Ω

∙Very wide frequency range (4 Ghz at 3 dB bandwidth)

∙Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)

∙10 dBm saturated output power at 1 GHz

∙High linearity (18 dBm IP3(out) at 1 GHz)

∙Low current (14.6 mA)

∙Unconditionally stable.

APPLICATIONS

∙LNB IF amplifiers

∙Cable systems

∙ISM

∙General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

QUICK REFERENCE DATA

PINNING

PIN	DESCRIPTION
1	VS
2, 5	GND2
3	RF out
4	GND1
6	RF in

6	5	4		1
			6	3
1	2	3	4	2, 5
Top view			MAM455

Marking code: C2-.

Fig.1 Simplified outline (SOT363) and symbol.

SYMBOL		PARAMETER		CONDITIONS	TYP.		MAX.	UNIT
VS		DC supply voltage			3	4		V
IS		DC supply current			14.6	−		mA
⎪s	⎪2	insertion power gain	f = 1 GHz		20.1	−		dB
21
NF		noise figure	f = 1 GHz		4.8	−		dB
PL(sat)		saturated load power	f = 1 GHz		9.7	−		dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Sep 06 2