Philips BGM1012 specifications MMIC wideband amplifier, Philips Semiconductors, 2002 Sep

Models: BGM1012

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Philips Semiconductors

Product specification

 

 

MMIC wideband amplifier

BGM1012

 

 

 

 

 

 

90°

 

 

 

 

 

 

+1

 

 

 

135°

+0.5

 

 

+2

45°

 

 

 

 

 

 

+0.2

 

 

 

 

+5

 

 

 

4 GHz

100 MHz

 

 

 

0.2

0.5

2

 

5

180°

 

 

0

 

 

 

 

0°

 

0.2

 

 

 

 

5

 

135°

0.5

 

 

2

45°

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

MLD910

90°

IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.

1.0

0.8

0.6

0.4

0.2

0

1.0

Fig.7 Input reflection coefficient (s11); typical values.

 

 

 

90°

 

 

 

 

 

 

+1

 

 

 

 

135°

+0.5

 

 

+2

45°

 

 

 

 

 

 

+0.2

 

 

 

 

+5

 

 

 

 

100 MHz

 

 

180°

0.2

0.5

1

2

 

5

0

 

 

 

 

0°

 

 

 

4 GHz

 

 

 

 

0.2

 

 

 

 

5

 

135°

0.5

 

 

2

45°

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

MLD911

90°

IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.

1.0

0.8

0.6

0.4

0.2

0

1.0

Fig.8 Output reflection coefficient (s22); typical values.

2002 Sep 06

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Philips BGM1012 specifications MMIC wideband amplifier, Philips Semiconductors, 2002 Sep