Philips Semiconductors |
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MMIC wideband amplifier |
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| BGM1012 | |||
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CHARACTERISTICS |
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VS = 3 V; IS = 14.6 mA; Tj = 25 °C; unless otherwise specified. |
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SYMBOL | PARAMETER | CONDITIONS | MIN. | TYP. |
| MAX. | UNIT |
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IS | supply current |
| 11 | 14.6 |
| 19 | mA |
⎪s ⎪2 | insertion power gain | f = 100 MHz | 19 | 19.5 |
| 20 | dB |
21 |
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| f = 1 GHz | 19 | 20.1 |
| 21 | dB |
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| f = 1.8 GHz | 19 | 20.4 |
| 21 | dB |
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| f = 2.2 GHz | 19 | 20.4 |
| 22 | dB |
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| f = 2.6 GHz | 18 | 19.9 |
| 21 | dB |
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| f = 3 GHz | 16 | 18.7 |
| 20 | dB |
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RL IN | return losses input | f = 1 GHz | 9 | 11 |
| − | dB |
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| f = 2.2 GHz | 13 | 15 |
| − | dB |
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RL OUT | return losses output | f = 1 GHz | 11 | 14 |
| − | dB |
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| f = 2.2 GHz | 10 | 13 |
| − | dB |
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⎪s ⎪2 | isolation | f = 1 GHz | 30 | 33 |
| − | dB |
12 |
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| f = 2.2 GHz | 35 | 38 |
| − | dB |
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NF | noise figure | f = 1 GHz | − | 4.8 |
| 5.1 | dB |
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| f = 2.2 GHz | − | 4.9 |
| 5.3 | dB |
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BW | bandwidth | at ⎪s21⎪2 −3 dB below flat gain at 1 GHz | 3.1 | 3.6 |
| − | GHz |
K | stability factor | f = 1 GHz | 1.5 | 2.1 |
| − | − |
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| f = 2.2 GHz | 3 | 3.4 |
| − | − |
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PL(sat) | saturated load power | f = 1 GHz | 8 | 9.7 |
| − | dBm |
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| f = 2.2 GHz | 3.5 | 5.6 |
| − | dBm |
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PL 1 dB | load power | at 1 dB gain compression; f = 1 GHz | 4 | 6.0 |
| − | dBm |
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| at 1 dB gain compression; f = 2.2 GHz | 1.5 | 3.4 |
| − | dBm |
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IP3(in) | input intercept point | f = 1 GHz | −4 | −2 |
| − | dBm |
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| f = 2.2 GHz | −9 | −7 |
| − | dBm |
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IP3(out) | output intercept point | f = 1 GHz | 16 | 18 |
| − | dBm |
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| f = 2.2 GHz | 11 | 13 |
| − | dBm |
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2002 Sep 06 | 4 |
