Philips BGM1012 specifications Isolation ⎪s 12 ⎪ 2 as a function of frequency

Philips Semiconductors Product specification

MMIC wideband amplifier								BGM1012
0				MLD912	25				MLD913
handbook, halfpage					handbook, halfpage
s12 2					s21 2
(dB)
−10					(dB)
					20				(1)
−20
									(2)
−30									(3)
					15
−40
−50					10	1000	2000		4000
0	1000	2000	3000	4000	0			3000

f (MHz)		f (MHz)
	PD = −30 dBm; ZO = 50 Ω.
	(1)	IS = 18.7 mA; VS = 3.3 V.
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.	(2)	IS = 14.6 mA; VS = 3 V.
	(3)	IS = 10.6 mA; VS = 2.7 V.
Fig.9 Isolation (⎪s12⎪2) as a function of frequency;	Fig.10 Insertion gain (⎪s21⎪2) as a function of
typical values.		frequency; typical values.

20				MLD914
handbook, halfpage
PL
(dBm)
10			(1)
				(2)
			(3)
0
−10
−20		−20
−40	−30		−10	0
				PD (dBm)

f = 1 GHz; ZO = 50 Ω.

(1)VS = 3.3 V.

(2)VS = 3 V.

(3)VS = 2.7 V.

Fig.11 Load power as a function of drive power at 1 GHz; typical values.

20				MLD915
handbook, halfpage
PL
(dBm)
10
			(1)
0			(3)	(2)
−10
−20		−20
−40	−30		−10	0
				PD (dBm)

f = 2.2 GHz; ZO = 50 Ω.

(1)VS = 3.3 V.

(2)VS = 3 V.

(3)VS = 2.7 V.

Fig.12 Load power as a function of drive power at 2.2 GHz; typical values.

2002 Sep 06 7