2000 Oct 16 2
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
FEATURES
•Operating at 3.6 V battery supply
•Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
•Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
•Wide operating temperature range from −20 to +85 °C
•HTSSOP20 exposed die pad package.
APPLICATIONS
•Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins VDD (drain) control the power
of the power amplifier and permit to switch it off.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VDD positive supply voltage −3.5 4.2 V
IDD(LB) GSM positive peak supply current −2−A
Po(LB)(max) maximum output power in GSM band 34.5 35 −dBm
IDD(HB) DCS/PCS positive peak supply current −1.5 −A
Po(HB)(max) maximum output power in DCS/PCS band 32 32.5 −dBm
Tamb ambient temperature −20 −+85 °C
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
CGY2014TT HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm SOT527-1