2000 Oct 16 4
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
PINNING
SYMBOL PIN DESCRIPTION
n.c. 1 not connected
RFIHB 2 DCS/PCS power amplifier input
VDD1HB 3 DCS/PCS first stage supply voltage
VDD2HB 4 DCS/PCS second stage supply voltage
VDD2HB 5 DCS/PCS second stage supply voltage
VDD2LB 6 GSM second stage supply voltage
VDD1LB 7 GSM first stage supply voltage
GND1LB 8 GSM first stage ground
RFILB 9 GSM power amplifier input
n.c. 10 not connected
n.c. 11 not connected
n.c. 12 not connected
RFO/VDD3LB 13 GSM power amplifier output and third stage supply voltage
RFO/VDD3LB 14 GSM power amplifier output and third stage supply voltage
GND 15 ground
n.c. 16 internal connection to ground; pin should not be connected to the board
RFO/VDD3HB 17 DCS/PCS power amplifier output and third stage supply voltage
RFO/VDD3HB 18 DCS/PCS power amplifier output and third stage supply voltage
n.c. 19 not connected
n.c. 20 not connected
−exposed die ground
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2014TT is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the
“ETS 300 577 specification”
, which are
defined as follows:
•ton = 570 µs
•T = 4.16 ms
•Duty cycle δ=1/8.
Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.
Power amplifier
The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.
handbook, halfpage
CGY2014TT
FCA181
1
2
3
4
5
6
7
8
9
10
n.c.
RFIHB
VDD1HB
VDD2HB
VDD2HB
VDD2LB
VDD1LB
GND1LB
RFILB
n.c.
n.c.
n.c.
RFO/VDD3HB
RFO/VDD3HB
n.c.
GND
RFO/VDD3LB
RFO/VDD3LB
n.c.
n.c.
20
19
18
17
16
15
14
13
12
11
Fig.2 Pin configuration.