Philips CGY2014TT 2000 Oct 16 7, Performance characteristics in GSM band, Fig.3 Output power and efficiency as a function of the frequency., Fig.4 Output power as a function of the supply voltage., Performance characteristics in DCS band, Fig.5 Output power and efficiency as a function of the frequency., Fig.6 Output power as a function of the supply voltage.

2000 Oct 16 7
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
Performance characteristics in GSM band
handbook, halfpage
800 850
Po
(dBm)
900 1000
37
33
31
35
η
(%)
60
40
20
0
950fRF (MHz)
FCA171
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.3 Output power and efficiency as a function of
the frequency.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
VDD1(LB) =3V.
V
DD2(LB) =V DD3(LB) = 3.5 V.
Pi(LB) = 0 dBm.
handbook, halfpage
01
P
o
(dBm)
24
40
30
10
0
20
3VDD (V)
FCA176
(1)
(2)
(3)
Fig.4 Output power as a function of the supply
voltage.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
fRF(LB) = 900 MHz.
Pi(LB) = 0 dBm.
VDD1(LB) =3V.
V
DD =V DD2(LB) =V DD3(LB).
Performance characteristics in DCS band
handbook, halfpage
1650 1700
Po
(dBm)
1750 1850
35.5
34.5
32.5
31.5
33.5
η
(%)
55
45
25
15
35
1800
fRF (MHz)
FCA172
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.5 Output power and efficiency as a function of
the frequency.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
VDD1(HB) =3V.
V
DD2(HB) =V DD3(HB) = 3.5 V.
Pi(HB) = 3 dBm.
handbook, halfpage
01
P
o
(dBm)
24
40
30
10
0
20
3VDD (V)
FCA173
(1)
(2)
(3)
Fig.6 Output power as a function of the supply
voltage.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
fRF(HB) = 1750 MHz.
Pi(HB) = 3 dBm.
VDD1(HB) =3V.
V
DD =V DD2(HB) =V DD3(HB).