1999 Oct 12 17
Philips Semiconductors Product specification
IC card interface TDA8002C
CHARACTERISTICS
VDD = 3.3 V; Tamb =25°C; fxtal= 10 MHz; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
VDD supply voltage 3 −6.5 V
IDD(lp) supply current low-power mode −−150 µA
IDD(idle) supply current Idle mode; fCLKOUT = 10 MHz −−5mA
I
DD(active) supply current active mode; VCC(O) =5V;
f
CLKOUT =10MHz
f
CLK = LOW; ICC = 100 µA−−8mA
f
CLK = 5 MHz; ICC =10mA −−50 mA
fCLK = 5 MHz; ICC =55mA −−140 mA
active mode; VCC(O) =3V;
f
CLKOUT =10MHz
f
CLK = LOW; ICC = 100 µA−−8mA
f
CLK = 5 MHz; ICC =10mA −−50 mA
fCLK = 5 MHz; ICC =55mA −−140 mA
Vth2 threshold voltage on VDD for
voltage supervisor falling 2.2 −2.4 V
Vhys2 hysteresis on Vth2 50 100 150 mV
Card supply
VCC(O) output voltage Idle mode −−0.3 V
active mode
VCC =5V;I
CC < 55 mA;
DC load 4.6 −5.4 V
ICC = 40 nAs; AC load 4.6 −5.4 V
VCC = 3 V; ICC < 55 mA;
DC load 2.76 −3.24 V
ICC = 24 nAs; AC load 2.76 −3.24 V
ICC(O) output current VCC(O) = from 0 to 5 or 3 V −−55 mA
VCC short-circuited to ground −200 −mA
SR slew rate rising or falling slope 0.10 0.15 0.20 V/µs
Crystal connections (XTAL1 and XTAL2)
Cext external capacitors note 1 −15 −pF
fxtal resonance frequency note 2 2 −24 MHz