TDA8950_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 9 September 2008 15 of 39
NXP Semiconductors TDA8950

2× 150 W class-D power amplifier

12.2 Stereo and dual SE application characteristics

[1] RsL is the series resistance of inductor of low-pass LC filter in the application.
[2] Output power is measured indirectly; based on RDSon measurement. See also Section 13.3.
[3] THD is measured in a bandwidth of 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter. Maximum limit is not guaranteed100 % tested.
[4] Vripple = Vripple(max) = 2 V (p-p); Rs = 0 . Measured independently between VDDPn and SGND and between VSSPn and SGND.
[5] B = 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter.
[6] B = 22 Hz to 22 kHz, using AES17 20 kHz brickwall filter; independent of Rs.
[7] Po = 1 W; Rs = 0 ; fi = 1 kHz.
[8] Vi = Vi(max) = 1 V (RMS); fi = 1 kHz.
[9] Leads and bond wires included.
Table 9. Dynamic characteristics
V
P

=

±

35 V; R

L

= 4

; f

i

= 1 kHz; f

osc

= 345 kHz; R

sL

< 0.1

[1]

; T

amb

= 25

°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Pooutput power L = 22 µH; C = 680 nF; Tj=85°C[2]
RL=4; THD = 0.5 %; VP = ±37 V - 100 - W
RL=4; THD = 10 %; VP = ±37 V - 150 - W
RL=6; THD = 10 %; VP = ±37 V - 100 - W
RL=4; THD = 10 %; VP = ±39 V - 170 - W
THD total harmonic distortion Po= 1 W; fi= 1 kHz [3] - 0.05 - %
Po= 1 W; fi= 6 kHz [3] - 0.05 - %
Gv(cl) closed-loop voltage gain 29 30 31 dB
SVRR supply voltage ripple rejection between pin VDDPn and SGND
operating; fi= 100 Hz [4] -90-dB
operating; fi= 1 kHz [4] -70-dB
mute; fi= 100 Hz [4] -75-dB
standby; fi= 100 Hz [4] - 120 - dB
between pin VSSPn and SGND
operating; fi= 100 Hz [4] -80-dB
operating; fi= 1 kHz [4] -60-dB
mute; fi= 100 Hz [4] -80-dB
standby; fi= 100 Hz [4] - 115 - dB
Ziinput impedance between the input pins and SGND 45 63 - k
Vn(o) output noise voltage operating; Rs=0[5] - 160 - µV
mute [6] -85-µV
αcs channel separation [7] -70-dB
|∆Gv|voltage gain difference - - 1 dB
αmute mute attenuation fi= 1 kHz; Vi= 2 V (RMS) [8] -75-dB
CMRR common mode rejection ratio Vi(CM) = 1 V (RMS) - 75 - dB
ηpo output power efficiency SE, RL = 4 -88-%
SE, RL = 6 -90-
BTL, RL = 8 -88-%
RDSon(hs) high-side drain-source on-state resistance [9] - 200 - m
RDSon(ls) low-side drain-source on-state resistance [9] - 190 - m