TDA8950_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 9 September 2008 12 of 39
NXP Semiconductors TDA8950
2× 150 W class-D power amplifier
9. Limiting values
10. Thermal characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VPsupply voltage non-operating mode; VDD −VSS -90V
IORM repetitive peak
output current maximum output current limiting 9.2 - A
Tstg storage temperature −55 +150 °C
Tamb ambient temperature −40 +85 °C
Tjjunction temperature - 150 °C
VMODE voltage on pin
MODE referenced to SGND 0 6 V
VOSC voltage on pin OSC 0 SGND
+ 6 V
VIinput voltage referenced to SGND; pin IN1P; IN1M;
IN2P and IN2M −5+5V
VPROT voltage on pin PROT referenced to voltage on pin VSSD 0 12 V
Vesd electrostatic
discharge voltage Human Body Model (HBM);
pin VSSP1 with respect to other pins −1800 +1800 V
HBM; all other pins −2000 +2000 V
Machine Model (MM); all pins −200 +200 V
Charged Device Model (CDM) −500 +500 V
Iq(tot) total quiescent
current Operating mode; no load; no filter; no
RC-snubber network connected -75mA
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W
Rth(j-c) thermal resistance from junction to case 1.1 K/W